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Specific Process Knowledge/Etch/Etching of Silicon Nitride: Difference between revisions

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Silicon nitride can be etched using either wet chemistry or dry etch equipment. Wet chemistry is mainly used to remove all the nitride on the surface (backside and frontside) of a wafer. Dry etching etches one side at a time and can be used to etch structures with several masking materials.
Silicon nitride can be etched using either wet chemistry or dry etch equipment. Wet chemistry is mainly used to remove all the nitride on the surface (backside and frontside) of a wafer. Dry etching etches one side at a time and can be used to etch structures with several masking materials.


*[[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]]
 
*[[/Etch of Silicon Nitride using RIE|Etch of Silicon Nitride using RIE]]
*[[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)|Etch of Silicon Nitride using AOE]]
*[[Specific Process Knowledge/Etch/IBE/IBSD Ionfab 300|IBE/Ion Beam Etching using IBSD Ionfab 300]]




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