Specific Process Knowledge/Etch/Etching of Silicon Nitride: Difference between revisions
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*Typically 40-50 nm/min can be increased or decreased by using other recipe parameters. | *Typically 40-50 nm/min can be increased or decreased by using other recipe parameters. | ||
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*Process | *Process dependent. | ||
*Tested once to ~60nm/min | *Tested once to ~60nm/min | ||
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*Process | *Process dependent. | ||
*Has not been tested yet. | *Has not been tested yet. | ||
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*<nowiki>#</nowiki>1 50 mm wafer fitted on a 100mm wafer | *<nowiki>#</nowiki>1 50 mm wafer fitted on a 100mm wafer | ||
*<nowiki>#</nowiki>1 100 mm wafer | *<nowiki>#</nowiki>1 100 mm wafer | ||
*<nowiki>#</nowiki>1 150 mm wafers (only when | *<nowiki>#</nowiki>1 150 mm wafers (only RIE2 when set up to 150mm) | ||
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*As many samples as can be securely fitted on a up to 200mm wafer | *As many samples as can be securely fitted on a up to 200mm wafer | ||
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*Silicon Oxynitride | *Silicon Oxynitride | ||
*Photoresist | *Photoresist | ||
*E-beam | *E-beam resists | ||
*DUV resists | |||
*Other metals if they cover less than 5% of the wafer area (ONLY RIE2!) | *Other metals if they cover less than 5% of the wafer area (ONLY RIE2!) | ||
*Quartz/fused silica | *Quartz/fused silica | ||
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*Silicon Oxynitride | *Silicon Oxynitride | ||
*Photoresist | *Photoresist | ||
* | *E-beam resists | ||
*DUV resists | |||
*Aluminium | *Aluminium | ||
*Chromium (try to avoid it) | *Chromium (try to avoid it) | ||