Specific Process Knowledge/Thin film deposition/Deposition of TiW: Difference between revisions

From LabAdviser
Kn (talk | contribs)
No edit summary
Kn (talk | contribs)
No edit summary
Line 1: Line 1:
'''Feedback to this page''': '''[mailto:pvd@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_TiW&action=edit click here]'''
Deposition of TiW alloy can take place in the Wordentec.
Deposition of TiW alloy can take place in the Wordentec.



Revision as of 10:36, 17 April 2013

Feedback to this page: click here


Deposition of TiW alloy can take place in the Wordentec.


Sputter deposition (Wordentec)
Batch size
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
Pre-clean RF Ar clean
Layer thickness .
Deposition rate Depending on process parameters, see here.


Deposited rates

This is done by a sputtering process. Process parameters (argon pressure and effect) can be varied, the surface roughness and the deposition rate (see here) and may change with these settings.


Deposited film characteristics

AFM pictures show how the surface roughness is dependent of the process parameters, this can be seen here.