Specific Process Knowledge/Etch/RIE (Reactive Ion Etch): Difference between revisions
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*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using RIE1 or RIE2|Etch of Silicon Oxide using RIE]] | *[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using RIE1 or RIE2|Etch of Silicon Oxide using RIE]] | ||
*[[Specific Process Knowledge/Etch/Etching of Silicon Nitride/Etch of Silicon Nitride using RIE|Etch of Silicon Nitride using RIE]] | *[[Specific Process Knowledge/Etch/Etching of Silicon Nitride/Etch of Silicon Nitride using RIE|Etch of Silicon Nitride using RIE]] | ||
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==A rough overview of the performance of PECVD thin films and some process related parameters== | |||
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!style="background:silver; color:black;" align="left"|Purpose | |||
|style="background:LightGrey; color:black"|Deposition of dielectrica ||style="background:WhiteSmoke; color:black"| | |||
*Silicon oxide | |||
*Silicon nitride | |||
*Silicon oxynitride | |||
*PBSG (Phosphorous Boron doped Silica Glass) | |||
*Silicon oxide doped with Germanium | |||
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!style="background:silver; color:black" align="left"|Performance | |||
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"| | |||
*~10nm - 30µm | |||
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|style="background:silver; color:black" |.||style="background:LightGrey; color:black"|Index of refraction||style="background:WhiteSmoke; color:black"| | |||
*~1.4-2.1 | |||
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|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Step coverage | |||
|style="background:WhiteSmoke; color:black"| | |||
*In general: Not so good | |||
*PBSG: Floats at 1000<sup>o</sup>C | |||
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|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Film quality | |||
|style="background:WhiteSmoke; color:black"| | |||
*Not so dense film | |||
*Hydrogen will be incorporated in the films | |||
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!style="background:silver; color:black" align="left"|Process parameter range | |||
|style="background:LightGrey; color:black"|Process Temperature | |||
|style="background:WhiteSmoke; color:black"| | |||
*300 <sup>o</sup>C | |||
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|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Process pressure | |||
|style="background:WhiteSmoke; color:black"| | |||
*~200-900 mTorr | |||
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|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Gas flows | |||
|style="background:WhiteSmoke; color:black"| | |||
*SiH<math>_4</math>:0-60 sccm | |||
*N<math>_2</math>O:0-3000 sccm | |||
*NH<math>_3</math>:0-1000 sccm | |||
*N<math>_2</math>:0-3000 sccm | |||
*GeH<math>_4</math>:0-6.00 sccm | |||
*5%PH<math>_3</math>:0-99 sccm | |||
*5%B<math>_2</math>H<math>_6</math>:0-1000 sccm | |||
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!style="background:silver; color:black" align="left"|Substrates | |||
|style="background:LightGrey; color:black"|Batch size | |||
|style="background:WhiteSmoke; color:black"| | |||
*1-3 4" wafer per run | |||
*1 6" wafer per run | |||
*Or several smaler pieces | |||
*Deposition on one side of the substrate | |||
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|style="background:silver; color:black"|.|| style="background:LightGrey; color:black"|Substrate material allowed | |||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon wafers | |||
**with layers of silicon oxide or silicon (oxy)nitride | |||
*Quartz wafers | |||
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|style="background:silver; color:black"|.|| style="background:LightGrey; color:black"|Material allowed on the substrate | |||
|style="background:WhiteSmoke; color:black"| | |||
*Aluminium | |||
*All metals < 5% of the substrate coverage (ONLY PECVD3!) | |||
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