Specific Process Knowledge/Thin film deposition/Deposition of Tungsten: Difference between revisions

From LabAdviser
← Older editNewer edit →
VisualWikitext
Kn (talk | contribs)
danchip
979 edits
No edit summary
Kn (talk | contribs)
danchip
979 edits
No edit summary
Line 1: Line 1:
'''Feedback to this page''': '''[mailto:pvd@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tungsten&action=edit click here]'''
Tungsten (W) can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.
Tungsten (W) can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.


Revision as of 10:29, 15 April 2013

Feedback to this page: click here


Tungsten (W) can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.


E-beam evaporation (Alcatel)
Batch size
  • Up to 1x4" wafers
  • smaller pieces
Pre-clean RF Ar clean
Layer thickness 10Å to 1µm
Deposition rate 2Å/s to 15Å/s
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tungsten&oldid=9660"