Specific Process Knowledge/Etch/Etching of Silicon Oxide: Difference between revisions
Appearance
| Line 137: | Line 137: | ||
*Anisotropic etch: vertical sidewalls | *Anisotropic etch: vertical sidewalls | ||
| | | | ||
* | *Anisotropic etch: vertical sidewalls | ||
| | | | ||
*Primarily for pure physical etch by sputtering with Ar-ions | *Primarily for pure physical etch by sputtering with Ar-ions | ||
| Line 159: | Line 159: | ||
*Metals if they cover less than 5% of the wafer area (ONLY RIE2!) | *Metals if they cover less than 5% of the wafer area (ONLY RIE2!) | ||
| | | | ||
*Photoresist | |||
* | *DUV resist | ||
*E-beam resist | |||
*Silicon Oxide | *Silicon Oxide | ||
*Silicon Nitride | *Silicon Nitride | ||
*Aluminium | *Aluminium | ||
*Chromium (Please try to avoid this) | |||
| | | | ||
*Any material that is accepted in the machine | *Any material that is accepted in the machine | ||