Specific Process Knowledge/Etch/Etching of Silicon Oxide: Difference between revisions
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*~90 nm/min (Thermal oxide) in SIO Etch | *~90 nm/min (Thermal oxide) in SIO Etch | ||
*~25 nm/min (Thermal oxide) in 5%HF | *~25 nm/min (Thermal oxide) in 5%HF | ||
*~3-4µm/min in 40%HF| | *~3-4µm/min in 40%HF | ||
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*Typically 40-50 nm/min can be increased or decreased by using other recipe parameters. | *Typically 40-50 nm/min can be increased or decreased by using other recipe parameters. | ||
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