Specific Process Knowledge/Etch/Etching of Silicon Oxide: Difference between revisions
| Line 172: | Line 172: | ||
!Etch rate range | !Etch rate range | ||
| | | | ||
* | *~75 nm/min (Thermal oxide) in BHF | ||
| | *~90 nm/min (Thermal oxide) in SIO Etch | ||
*~25 nm/min (Thermal oxide) in 5%HF | |||
*~3-4µm/min in 40%HF| | |||
*Typically 40-50 nm/min can be increased or decreased by using other recipe parameters. | *Typically 40-50 nm/min can be increased or decreased by using other recipe parameters. | ||
| | | | ||