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Specific Process Knowledge/Etch/Etching of Silicon Nitride: Difference between revisions

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*Typically 40-50 nm/min can be increased or decreased by using other recipe parameters.  
*Typically 40-50 nm/min can be increased or decreased by using other recipe parameters.  
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*Process dependant. Tested once to ~60nm/min
*Process dependant.  
*Tested once to ~60nm/min
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*Process dependant. Has not been tested yet.
*Process dependant.
*Has not been tested yet.
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