Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
No edit summary |
No edit summary |
||
Line 23: | Line 23: | ||
| Deposition rate | | Deposition rate | ||
|2Å/s to 15Å/s | |2Å/s to 15Å/s | ||
| | |||
|- | |||
|Process temperature | |||
| | |||
| | |||
|- | |||
|Step coverage | |||
| | |||
| | |||
|- | |||
|Film quality | |||
| | |||
| | |||
|- | |||
|Substrate material allowed | |||
| | |||
| | | | ||
|- | |- |
Revision as of 08:05, 5 December 2007
PolySilicon can be sputtered in Alcatel and be deposited in the PolySilicon furnace.In the chart below you can compare the two different deposition methodes:
Sputter (Alcatel) | Furnace PolySi | |
---|---|---|
Batch size |
|
|
Pre-clean | RF Ar clean | |
Layer thickness | 10Å to 1µm | |
Deposition rate | 2Å/s to 15Å/s | |
Process temperature | ||
Step coverage | ||
Film quality | ||
Substrate material allowed |
Sputtered Silicon in the Alcatel
The parameter(s) changed | New value(s) | Deposition rate |
---|---|---|
Standard parameters | None | |
Power | 400W | 3.8 Å/s |