Specific Process Knowledge/Etch/Etching of Silicon Oxide: Difference between revisions
| Line 126: | Line 126: | ||
![[Specific Process Knowledge/Etch/RIE (Reactive Ion Etch)|RIE (Reactive Ion Etch)]] | ![[Specific Process Knowledge/Etch/RIE (Reactive Ion Etch)|RIE (Reactive Ion Etch)]] | ||
![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]] | ![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]] | ||
![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]] | ![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]] | ||
| Line 145: | Line 143: | ||
| | | | ||
*AOE | *AOE | ||
| | | | ||
*Primarily for pure physical etch by sputtering with Ar-ions | *Primarily for pure physical etch by sputtering with Ar-ions | ||
| Line 176: | Line 170: | ||
*Silicon Nitride | *Silicon Nitride | ||
*Aluminium oxide | *Aluminium oxide | ||
| | | | ||
*Any material that is accepted in the machine | *Any material that is accepted in the machine | ||
| Line 206: | Line 186: | ||
| | | | ||
AOE | AOE | ||
| | | | ||
*Process dependant. Has not been tested yet. | *Process dependant. Has not been tested yet. | ||
| Line 230: | Line 206: | ||
*<nowiki>#</nowiki>1 100 mm wafer | *<nowiki>#</nowiki>1 100 mm wafer | ||
*<nowiki>#</nowiki>1 150 mm wafers (only when the system is set up to 150mm) | *<nowiki>#</nowiki>1 150 mm wafers (only when the system is set up to 150mm) | ||
| | | | ||
*As many samples as can be securely fitted on a up to 200mm wafer | *As many samples as can be securely fitted on a up to 200mm wafer | ||
| Line 279: | Line 245: | ||
*Aluminium | *Aluminium | ||
*Chromium (try to avoid it) | *Chromium (try to avoid it) | ||
*Quartz/fused silica | *Quartz/fused silica | ||
| | | | ||