Specific Process Knowledge/Etch/Etching of Silicon Nitride: Difference between revisions
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![[Specific Process Knowledge/Etch/RIE (Reactive Ion Etch)|RIE (Reactive Ion Etch)]] | ![[Specific Process Knowledge/Etch/RIE (Reactive Ion Etch)|RIE (Reactive Ion Etch)]] | ||
![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]] | ![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]] | ||
![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]] | ![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]] | ||
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*AOE | *AOE | ||
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*Primarily for pure physical etch by sputtering with Ar-ions | *Primarily for pure physical etch by sputtering with Ar-ions | ||
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*Silicon Nitride | *Silicon Nitride | ||
*Aluminium oxide | *Aluminium oxide | ||
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*Any material that is accepted in the machine | *Any material that is accepted in the machine | ||
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AOE | AOE | ||
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*Process dependant. Has not been tested yet. | *Process dependant. Has not been tested yet. | ||
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*<nowiki>#</nowiki>1 50 mm wafer fitted on a 100mm wafer | *<nowiki>#</nowiki>1 50 mm wafer fitted on a 100mm wafer | ||
*<nowiki>#</nowiki>1 100 mm wafer | *<nowiki>#</nowiki>1 100 mm wafer | ||
*<nowiki>#</nowiki>1 150 mm wafers (only when the system is set up to 150mm) | *<nowiki>#</nowiki>1 150 mm wafers (only when the system is set up to 150mm) | ||
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*As many samples as can be securely fitted on a up to 200mm wafer | *As many samples as can be securely fitted on a up to 200mm wafer | ||
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*Aluminium | *Aluminium | ||
*Chromium (try to avoid it) | *Chromium (try to avoid it) | ||
*Quartz/fused silica | *Quartz/fused silica | ||
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