Specific Process Knowledge/Etch/Etching of Titanium: Difference between revisions
No edit summary |
|||
Line 9: | Line 9: | ||
<br clear="all" /> | <br clear="all" /> | ||
==Comparison of Titanium Etch | ==Comparison of Titanium Etch Methodes== | ||
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" | {|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" |
Revision as of 11:25, 10 April 2013
Feedback to this page: click here
Etching of Titanium
Etching of titanium can be done either by wet etch, dry etch or by sputtering with ions.
Comparison of Titanium Etch Methodes
Ti wet etch 1 | Ti wet etch 2 | ICP metal | IBE (Ionfab300+) | |
---|---|---|---|---|
Generel description | BHF:Etch of titanium with or without photoresist mask. | Cold RCA1: Etch of titanium (as stripper or with eagle resist). | Dry plasma etch of Ti | Sputtering of Ti - pure physical etch |
Etch rate range |
|
|
|
|
Etch profile |
|
|
|
|
Substrate size |
|
|
|
Smaller pieces glued to carrier wafer
|
Allowed materials |
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals |
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals |
|
|