Specific Process Knowledge/Thin film deposition/PECVD: Difference between revisions

@@ Line 29: / Line 29: @@
 !style="background:silver; color:black" align="left"|Performance
 |style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
-*~40nm - 30µm
+*~10nm - 30µm
+|-
+|style="background:silver; color:black" |.||style="background:LightGrey; color:black"|Index of refraction||style="background:WhiteSmoke; color:black"|
+*~1.4-2.1
 |-
 |style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Step coverage
@@ Line 48: / Line 51: @@
 |style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Process pressure
 |style="background:WhiteSmoke; color:black"|
-*200-900 mTorr
+*~200-900 mTorr
 |-
 |style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Gas flows
 |style="background:WhiteSmoke; color:black"|
 *SiH<math>_4</math>:0-60 sccm
-*NH<math>_3</math>:10- sccm
+*N<math>_2</math>O:0-3000 sccm
-*
+*NH<math>_3</math>:0-1000 sccm
+*N<math>_2</math>:0-3000 sccm
+*GeH<math>_4</math>:0-6.00 sccm
+*5%PH<math>_3</math>:0-99 sccm
+*5%B<math>_2</math>H<math>_6</math>:0-1000 sccm
 |-
 !style="background:silver; color:black" align="left"|Substrates