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Specific Process Knowledge/Etch/Etching of Silicon Oxide: Difference between revisions

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=This Part is under construction=
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Etching_of_Silicon_Nitride click here]'''
<!-- Replace "http://labadviser.danchip.dtu.dk/..." with the link to the Labadviser page-->
== Comparing silicon etch methodes at Danchip [[Image:section under construction.jpg|70px]]==
There are a broad varity of silicon nitride etch methods at Danchip. The methodes are compared here to make it easier for you to compare and choose the one that suits your needs.
*[[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]]
*[[/Etch of Silicon Nitride using RIE|Etch of Silicon Nitride using RIE]]
*[[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE|Etch of Silicon Nitride using AOE]]
*[[Specific Process Knowledge/Etch/IBE/IBSD Ionfab 300|IBE/Ion Beam Etching using IBSD Ionfab 300]]
==Compare the methodes for Silicon Nitride etching==
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
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![[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]]
![[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|BHF]]
![[Specific Process Knowledge/Etch/RIE (Reactive Ion Etch)|RIE (Reactive Ion Etch)]]
![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]]
![[Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch)|ASE (Advanced Silicon Etch)]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP Metal Etch]]
![[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE/IBSD Ionfab 300]]
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!Generel description
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*Isotropic etch
*Well suited for removing all nitride on a wafer surface (nitride strip) without a mask. High selectivity Si<sub>3</sub>N<sub>4</sub>/Si (>100) and Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> (>20) @ 180 C.
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*Isotropic etch
*Well suited for removing all  PECVD nitride on a wafer surface (nitride strip) without a mask. Etches LPCVD nitride very slowly
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*Anisotropic etch: vertical sidewalls
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*AOE
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*ASE
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*This is dedicated to metal etch.
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*Primarily for pure physical etch by sputtering with Ar-ions
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!Possible masking materials
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*Silicon Oxide
*PolySilicon
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*Photoresist
*PolySilicon
*Blue film
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*Photoresist
*E-beam resist
*Silicon Oxide
*Silicon Nitride
*Aluminium
*Metals if they cover less than 5% of the wafer area (ONLY RIE2!)
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AOE
*Photoresist and zep resist
*Silicon Oxide
*Silicon Nitride
*Aluminium oxide
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ASE
*Photoresist
*Silicon Oxide
*Silicon Nitride
*Aluminium
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ICP Metal
*Photo-, DUV- and e-beamresist
*Silicon Oxide
*Silicon Nitride
*Aluminium
*Cr
*Ti
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*Any material that is accepted in the machine
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|-style="background:WhiteSmoke; color:black"
!Etch rate range
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*Si<sub>3</sub>N<sub>4</sub> @ 180 <sup>o</sup>C: ~84 Å/min
*Si<sub>3</sub>N<sub>4</sub> @ 160 <sup>o</sup>C: ~60 Å/min
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*PECVD nitride: ~400-1000 Å/min
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*Typically 40-50 nm/min can be increased or decreased by using other recipe parameters.
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AOE
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ASE
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ICP metal
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*Process dependant. Has not been tested yet.
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!Substrate size
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*<nowiki>#</nowiki>1-25 100 mm wafers
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*<nowiki>#</nowiki>1-25 100mm wafers in our 100mm bath
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*As many small samples as can be fitted on the 100mm carrier.
*<nowiki>#</nowiki>1 100mm wafer (or smaller with carrier)
*<nowiki>#</nowiki>1 150mm wafer (only when the system is set up for 150mm)
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*As many small samples as can be fitted on a 100mm wafer
*<nowiki>#</nowiki>1 50 mm wafer fitted on a 100mm wafer
*<nowiki>#</nowiki>1 100 mm wafer
*<nowiki>#</nowiki>1 150 mm wafers (only when the system is set up to 150mm)
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*As many small samples as can be fitted on a 100mm wafer
*<nowiki>#</nowiki>1 50 mm wafer fitted on a 100mm wafer
*<nowiki>#</nowiki>1 100 mm wafer
*<nowiki>#</nowiki>1 150 mm wafers (only when the system is set up to 150mm)
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*As many small samples as can be fitted on a 150mm wafer
*<nowiki>#</nowiki>5 50 mm wafer fitted on a 150mm wafer
*<nowiki>#</nowiki>1 100 mm wafer on a 150mm wafer
*<nowiki>#</nowiki>1 150 mm wafers (The system is normally set up to 150mm)
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*As many samples as can be securely fitted on a up to 200mm wafer
*<nowiki>#</nowiki>1 50 mm wafer with special carrier
*<nowiki>#</nowiki>1 100 mm wafer with special carrier
*<nowiki>#</nowiki>1 150 mm wafers with special carrier
*<nowiki>#</nowiki>1 200 mm wafer
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|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
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*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
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*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
*Photoresist
*Blue film
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*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
*Photoresist
*E-beam resist
*Other metals if they cover less than 5% of the wafer area (ONLY RIE2!)
*Quartz/fused silica
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*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
*Photoresist
*zep resist
*Aluminium
*Chromium (try to avoid it)
*Quartz/fused silica
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*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
*Photoresist
*E-beam resist
*Aluminium
*Quartz/fused silica
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*Silicon
*Photoresist/e-beam resist
*PolySilicon
*Silicon oxide
*Silicon (oxy)nitride
*Aluminium
*Titanium
*Chromium
*Quartz/fused silica
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*Silicon
*Silicon oxides
*Silicon (oxy)nitrides
*Metals from the +list
*Metals from the -list
*Alloys from the above list
*Stainless steel
*Glass
*III-V materials
*Resists
*Polymers
*Capton tape
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