Specific Process Knowledge/Etch/Etching of Silicon Nitride: Difference between revisions

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 !Etch rate range
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-*Si(100) @80<sup>o</sup>C: 1.29+0.05 µm/min
+*Si<sub>3</sub>N<sub>4</sub> @ 180 <sup>o</sup>C: ~84 Å/min
-*Si(100) @70<sup>o</sup>C: ~0.7 µm/min
+*Si<sub>3</sub>N<sub>4</sub> @ 160 <sup>o</sup>C: ~60 Å/min
-*Si(100) @60<sup>o</sup>C: ~0.4 µm/min
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-*~100-200 nm/min, highly dependent on doping level
+*PECVD nitride: ~400-1000 Å/min
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-*<40nm/min to >600nm/min depending on recipe parameters and mask design
+*Typically 40-50 nm/min can be increased or decreased by using other recipe parameters.
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-*Up to 18-20 µm/min depending on recipe, mask design and aspect ratio.
+AOE
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-*<130nm/min to >5.6 µm/min depending on recipe, mask design and aspect ratio.
+ASE
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-*Process dependant. The nano etch is in the range 59-311 nm/min
+ICP metal
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-*Process dependant. Has been tested in the range 17-31 nm/min
+*Process dependant. Has not been tested yet.
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