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Specific Process Knowledge/Etch/Etching of Silicon Nitride: Difference between revisions

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!Generel description
!Generel description
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*Anisotropic etch in the (100)-plan
*Isotropic etch
*High selectivity to the other plans
*Well suited for removing all nitride on a wafer surface (nitride strip) without a mask. High selectivity Si<sub>3</sub>N<sub>4</sub>/Si (>100) and Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> (>20) @ 180 C.
*Anisotropic etch: vertical sidewalls independent of the crystal plans
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*Isotropic etch in Silicon and Polysilicon
*Isotropic etch
*Well suited for removing all  PECVD nitride on a wafer surface (nitride strip) without a mask. Etches LPCVD nitride very slowly
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*Can etch isotropic and anisotropic depending on the process parameters
*Can etch isotropic and anisotropic depending on the process parameters
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