Specific Process Knowledge/Thin film deposition/PECVD: Difference between revisions
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All though PECVD1, 2 and 3 are very similar you should not expect to transfer a recipe between the systems and get the same exact same result. | All though PECVD1, 2 and 3 are very similar you should not expect to transfer a recipe between the systems and get the same exact same result. | ||
== Recipes on PECVD1 == | == Recipes on PECVD1 and PECVD3 == | ||
*[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD#Recipes on PECVD1 for deposition of silicon oxides|Recipes on PECVD1 for deposition of silicon oxides]] | *[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD#Recipes on PECVD1 for deposition of silicon oxides|Recipes on PECVD1 for deposition of silicon oxides]] | ||
*[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD#Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride|Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride]] | *[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD#Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride|Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride]] | ||
*[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD#Recipes on PECVD3 for deposition of silicon oxides|Recipes on PECVD3 for deposition of silicon oxides]] | *[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD#Recipes on PECVD3 for deposition of silicon oxides|Recipes on PECVD3 for deposition of silicon oxides]] | ||
*[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD#Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride|Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride]] | *[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD#Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride|Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride]] | ||
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==A rough overview of the performance of PECVD thin films and some process related parameters== | |||
{| border="2" cellspacing="0" cellpadding="10" | |||
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!style="background:silver; color:black;" align="left"|Purpose | |||
|style="background:LightGrey; color:black"|Deposition of dielectrica ||style="background:WhiteSmoke; color:black"| | |||
*Silicon oxide | |||
*Silicon nitride | |||
*Silicon oxynitride | |||
*PBSG (Phosphorous Boron doped Silica Glass) | |||
*Silicon oxide doped with Germanium | |||
|- | |||
!style="background:silver; color:black" align="left"|Performance | |||
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"| | |||
*~20nm - 20µm | |||
|- | |||
|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Step coverage | |||
|style="background:WhiteSmoke; color:black"| | |||
*In general: Not so good | |||
*PBSG: Floats at 1000<sup>o</sup>C | |||
|- | |||
|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Film quality | |||
|style="background:WhiteSmoke; color:black"| | |||
*Not so dense film | |||
*Hydrogen will be incorporated in the films | |||
|- | |||
!style="background:silver; color:black" align="left"|Process parameter range | |||
|style="background:LightGrey; color:black"|Process Temperature | |||
|style="background:WhiteSmoke; color:black"| | |||
*300 <sup>o</sup>C | |||
|- | |||
|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Process pressure | |||
|style="background:WhiteSmoke; color:black"| | |||
*200-900 mTorr | |||
|- | |||
|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Gas flows | |||
|style="background:WhiteSmoke; color:black"| | |||
*SiH<math>_4</math>:0-60 sccm | |||
*NH<math>_3</math>:10- sccm | |||
* | |||
|- | |||
!style="background:silver; color:black" align="left"|Substrates | |||
|style="background:LightGrey; color:black"|Batch size | |||
|style="background:WhiteSmoke; color:black"| | |||
*1-3 4" wafer per run | |||
*1 6" wafer per run | |||
*Or several smaler pieces | |||
*Deposition on one side of the substrate | |||
|- | |||
|style="background:silver; color:black"|.|| style="background:LightGrey; color:black"|Substrate material allowed | |||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon wafers | |||
**with layers of silicon oxide or silicon (oxy)nitride | |||
*Quartz wafers | |||
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|} | |||