Specific Process Knowledge/Etch/Etching of Silicon: Difference between revisions
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*<130nm/min to >5.6 µm/min depending on recipe, mask design and aspect ratio. | *<130nm/min to >5.6 µm/min depending on recipe, mask design and aspect ratio. | ||
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* | *Process dependant. The nano etch is in the range 59-311 nm/min | ||
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* | *Process dependant. Has been tested in the range 17-31 nm/min | ||
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