Specific Process Knowledge/Etch/Etching of Polymer: Difference between revisions
Line 45: | Line 45: | ||
!General description | !General description | ||
|The ASE was originally a dedicated deep Si etcher, but with the arrival of the Pegasus it has now been opened for polymer etching. | |The ASE was originally a dedicated deep Si etcher, but with the arrival of the Pegasus it has now been opened for polymer etching. | ||
|The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering | |The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering of polymers. | ||
|The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering | |The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering of polymers. This plasma asher is for Si wafers without metals. | ||
|RIE2 can etch polymers in almost the same way as the ASE. We prefer the you use the ASE but there can be situations where the sample will not be allowed in the ASE (e.g. if there are metal on). If you think you need to use the RIE2 for polymer etching you need to get a special permission from the plasma group, see contact info on the RIE2 page in LabManager. | |RIE2 can etch polymers in almost the same way as the ASE. We prefer the you use the ASE but there can be situations where the sample will not be allowed in the ASE (e.g. if there are metal on). If you think you need to use the RIE2 for polymer etching you need to get a special permission from the plasma group, see contact info on the RIE2 page in LabManager. | ||
|Wet polymer etch is used for stripping a resist/polymer when it is no longer needed. E.g. removing resist masks. | |Wet polymer etch is used for stripping a resist/polymer when it is no longer needed. E.g. removing resist masks. | ||
Line 55: | Line 55: | ||
!Etch direction | !Etch direction | ||
| | | | ||
Process | Process dependent: <br> | ||
Isotropic to anisotropic (vertical to sample surface) | Isotropic to anisotropic (vertical to sample surface) | ||
| | | | ||
Line 62: | Line 62: | ||
Isotropic | Isotropic | ||
| | | | ||
Process | Process dependent: <br> | ||
Almost isotropic to anisotropic (vertical to sample surface) | Almost isotropic to anisotropic (vertical to sample surface) | ||
| | | | ||
Line 70: | Line 70: | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!Possible etch | !Possible etch reactants | ||
| | | | ||
*Oxygen plasma | *Oxygen plasma | ||
Line 101: | Line 101: | ||
!Substrate size | !Substrate size | ||
| | | | ||
*samples smaller than 100 mm wafers must be glued to a 100 mm wafer or placed in a reces on a | *samples smaller than 100 mm wafers must be glued to a 100 mm wafer or placed in a reces on a 100 mm wafer. | ||
*<nowiki>#</nowiki>1 100 mm wafer | *<nowiki>#</nowiki>1 100 mm wafer | ||
*<nowiki>#</nowiki>1 150 mm wafer (only when system is set up to 150mm wafers) | *<nowiki>#</nowiki>1 150 mm wafer (only when system is set up to 150mm wafers) | ||
Line 118: | Line 118: | ||
*<nowiki>#</nowiki>1 50 mm wafer | *<nowiki>#</nowiki>1 50 mm wafer | ||
*<nowiki>#</nowiki>1 100 mm wafer | *<nowiki>#</nowiki>1 100 mm wafer | ||
*<nowiki>#</nowiki>1 150 mm wafer (only when the system is set up for | *<nowiki>#</nowiki>1 150 mm wafer (only when the the system is set up for 150 mm wafers). | ||
| | | | ||
*Any sample # and size that can go into the beaker used. | *Any sample # and size that can go into the beaker used. | ||
Line 135: | Line 135: | ||
*Polymers (list?) | *Polymers (list?) | ||
Quartz/fused silica wafers | Quartz/fused silica wafers | ||
Polymer wafers? | Polymer wafers? | ||
| | | | ||
*Si,SiO2,Si3N4 | *Si, SiO2, Si3N4 | ||
*Glass | *Glass | ||
*Metals (no Pb or Te) | *Metals (no Pb or Te) | ||
*Resists, polymers | *Resists, polymers | ||
| | | | ||
*Si,SiO2,Si3N4 | *Si, SiO2, Si3N4 | ||
*Glass | *Glass | ||
*Resists, polymers | *Resists, polymers | ||
| | | | ||
Silicon wafers with layers of | Silicon wafers with layers of | ||
* | *Silicon oxide or silicon (oxy)nitride | ||
*Photoresist/e-beam resist | *Photoresist/e-beam resist | ||
*PolySilicon | *PolySilicon | ||
*Metals(no Pb and Te) max 5% wafer coverage | *Metals (no Pb and Te) max 5% wafer coverage | ||
*Polymers (list?) | *Polymers (list?) | ||
Quartz/fused silica wafers | Quartz/fused silica wafers | ||
Polymer wafers (only with special | |||
Polymer wafers (only with special permission) | |||
| | | | ||
*Any material the may go into the beaker used. | *Any material the may go into the beaker used. |
Revision as of 12:43, 9 April 2013
THIS PAGE IS UNDER CONSTRUCTION
Feedback to this page: click here
Etching of Polymer
Stripping of polymer is often done by wet chemistry in a solvent that dissolves the given polymer. If wet chemistry cannot be used or a more controlled etch of the polymer is needed a plasma system is used instead. Plasma ashers are designed for removing polymers in primarily oxygen plasmas. It you need a more directional etch with a masking material RIE2 or ASE can be used.
Comparison of methods for polymer etching
ASE | Plasma asher 1 | Plasma asher 2 | RIE2 | Wet Polymer Etch | |
---|---|---|---|---|---|
General description | The ASE was originally a dedicated deep Si etcher, but with the arrival of the Pegasus it has now been opened for polymer etching. | The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering of polymers. | The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering of polymers. This plasma asher is for Si wafers without metals. | RIE2 can etch polymers in almost the same way as the ASE. We prefer the you use the ASE but there can be situations where the sample will not be allowed in the ASE (e.g. if there are metal on). If you think you need to use the RIE2 for polymer etching you need to get a special permission from the plasma group, see contact info on the RIE2 page in LabManager. | Wet polymer etch is used for stripping a resist/polymer when it is no longer needed. E.g. removing resist masks. |
Etch direction |
Process dependent: |
Isotropic |
Isotropic |
Process dependent: |
Isotropic |
Possible etch reactants |
|
|
|
|
|
Substrate size |
|
|
|
|
|
Allowed materials |
Silicon wafers with layers of
Quartz/fused silica wafers Polymer wafers? |
|
|
Silicon wafers with layers of
Quartz/fused silica wafers Polymer wafers (only with special permission) |
|