Specific Process Knowledge/Etch/Etching of Polymer: Difference between revisions

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*Oxygen plasma
*Oxygen plasma
*Oxygen plasma mixed with
*Oxygen plasma mixed with
**CO2
**CO<sub>2</sub>
**SF6
**SF<sub>6</sub>
**Ar
**Ar
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*Oxygen plasma
*Oxygen plasma
*Oxygen plasma mixed with
*Oxygen plasma mixed with
**CF4
**CF<sub>4</sub>
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|
*Oxygen plasma
*Oxygen plasma
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*Oxygen plasma
*Oxygen plasma
*Oxygen plasma mixed with
*Oxygen plasma mixed with
**CF4
**CF<sub>4</sub>
**SF6
**SF<sub>6</sub>
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|
*The different solvents available at Danchip, such as  
*The different solvents available at Danchip, such as  

Revision as of 10:10, 9 April 2013

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Etching of Polymer

Stripping of polymer is often done by wet chemistry in a solvent that dissolves the given polymer. If wet chemistry cannot be used or a more controled etch of the polymer is needed a plasma system is used instead. Plasma ashers are design for removing polymers in primarily oxygen plasmas. It you need a more directional etch with a masking material RIE2 or ASE can be used.



Comparison of methods for polymer etching

ASE Plasma asher 1 Plasma asher 2 RIE2 Wet Polymer Etch
Generel description The ASE was originally for deep Si etch but has now been turned into a polymer etcher. It should be used for pattering polymers The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering af polymers. The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering af polymers. This plasma asher is for Si wafers without metals. RIE2 can etch polymers in almost the same way as the ASE. We prefer the you use the ASE but there can be situations where the sample will not be allowed in the ASE (e.g. if there are metal on). If you think you need to use the RIE2 for polymer etching you need to get a special permission from the plasma group, see contact info on the RIE2 page in LabManager. Wet polymer etch is used for stripping a resist/polymer when it is no longer needed. E.g. removing resist masks.
Etch direction

Process dependant:
Isotropic to anisotropic (vertical to sample surface)

Isotropic

Isotropic

Process dependant:
Almost isotropic to anisotropic (vertical to sample surface)

Isotropic

Possible etch reactances
  • Oxygen plasma
  • Oxygen plasma mixed with
    • CO2
    • SF6
    • Ar
  • Oxygen plasma
  • Oxygen plasma mixed with
    • CF4
  • Oxygen plasma
  • Oxygen plasma
  • Oxygen plasma mixed with
    • CF4
    • SF6
  • The different solvents available at Danchip, such as
    • Acetone
    • 1165 Remover
    • ?
Substrate size
  • samples smaller than 100 mm wafers must be glued to a 100 mm wafer or placed in a reces on a 100mm wafer.
  • #1 100 mm wafer
  • #1 150 mm wafer (only when system is set up to 150mm wafers)
  • # small samples
  • #25 50 mm wafers
  • #25 100 mm wafers
  • #1 150 mm wafer
  • # small samples
  • #25 50 mm wafers
  • #25 100 mm wafers
  • #25 150 mm wafers
  • samples smaller that can fit on a 100mm wafer.
  • #1 50 mm wafer
  • #1 100 mm wafer
  • #1 150 mm wafer (only when the system is set up for 150mm wafers).
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
Allowed materials
  • Allowed material 1
  • Allowed material 2
  • Allowed material 1
  • Allowed material 2
  • Allowed material 3
  • Allowed material 1
  • Allowed material 2
  • Allowed material 1
  • Allowed material 2
  • Allowed material 1
  • Allowed material 2