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| *[[Specific Process Knowledge/Etch/Etching of Polymer/Etch of Photo Resist using RIE|Etch of Photo Resist using RIE]] | | *[[Specific Process Knowledge/Etch/Etching of Polymer/Etch of Photo Resist using RIE|Etch of Photo Resist using RIE]] |
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| == Etching of polymers on the ASE ==
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| SPTS has provided some recipes for polymer etching on the ASE. They have NOT been tested yet (As of August 2011) and we are therefore very interested in learning whatever experiences you have. Please contact Jonas. The recipes are located in the root folder. Please copy them to your own folder and modify them there for your own purposes as you would with any other recipe.
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| {| border="2" cellpadding="2" cellspacing="1"
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| |+ '''The polymer recipes'''
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| |-
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| ! rowspan="2" align="center"| Name
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| ! colspan="2" align="center"| Materials
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| ! colspan="8" align="center"| Process parameters
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| ! rowspan="2" align="center" width="300" | Comments by Kevin Riddell SPTS prior to any tests at Danchip
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| |-
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| | Mask
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| | Etched
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| | O<sub>2</sub>
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| | CO<sub>2</sub>
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| | SF<sub>6</sub>
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| | He/Ar
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| | Pressure
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| | Temp
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| | Coil
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| | Platen
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| |-
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| ! poly1
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| | Oxide hard mask
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| | polyimide/PMMA
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| | 0
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| | 50
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| | 0
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| | 0
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| | 4
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| | 0
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| | 600
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| | 150
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| | This will etch PMGI, PI, & standard resists. We've never tried it for PMMA, but it should work
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| |-
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| ! poly2
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| | standard resists, PI PMMA
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| | 20
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| | 0
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| | 0
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| | 20
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| | 3
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| | 10
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| | 600
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| | 150
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| | This will give higher etch rates & better selectivities, but slightly more bowed profiles
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| |-
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| ! poly3
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| | BCB
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| | 43
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| | 0
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| | 7
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| | 0
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| | 4
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| | 20
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| | 800
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| | 150
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| | A good start point for PDMS / Ormocer-type Si/ inorganic-containing polymers. The SF<sub>6</sub>/O<sub>2</sub> ratio will depend on the composition of the polymer.
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| |-
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| |}
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| === CYTOP etching: Results by Fei Wang, DTU Nanotech ===
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| {| border="2" cellpadding="2" cellspacing="1"
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| |+ '''Recipe'''
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| |-
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| ! rowspan="2" align="center"| Folder\name
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| ! colspan="2" align="center"| Materials
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| ! colspan="8" align="center"| Process parameters
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| ! rowspan="2" align="center" width="300" | Comments
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| |-
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| | Mask
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| | Etched
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| | O<sub>2</sub>
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| | CO<sub>2</sub>
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| | SF<sub>6</sub>
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| | He/Ar
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| | Pressure
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| | Temp
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| | Coil
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| | Platen
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| |-
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| | set\microrea\feicy3
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| | 1.5 µm PR
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| | CYTOP
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| | 5
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| | 0
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| | 0
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| | 20
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| | 3
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| | 0
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| | 600
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| | 150
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| | Estimated etch rate ~1.3um/min, selectivity around 1:8, etch load app. 10%
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| |-
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| |}
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| <gallery caption="The results of the CYTOP etching" widths="250" heights="200" perrow="3">
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| image:ASEpolymerEtching-cytop1.jpg| Profile
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| image:ASEpolymerEtching-cytop2.jpg| Top view
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| image:ASEpolymerEtching-cytop3.jpg| Profile
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| </gallery>
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| '''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=/... click here]''' | | '''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=/... click here]''' |
THIS PAGE IS UNDER CONSTRUCTION
Polymer dry etching
Upgrading the silicon etch capability at Danchip with the DRIE-Pegasus has pushed our old ASE (Advanced Silicon Etcher) out of the line so that it now only serves as backup silicon dry etcher. We have therefore decided that the ASE must be converted to a polymer etcher instead. Hence, it will join the plasma asher and to some extend the RIE's where polymer etching is allowed. In RIE1 it is only for removing photo resist before or after a RIE etch if the plasma asher cannot be used for some reason. On RIE2 you can get allowance for some other polymer etching but you have to ask first.
Feedback to this page: click here
Etchning of Polymers
Stripping of polymers are often done by wet chemistry in a solvent that dissolves the given polymer. If wet chemistry cannot be used or a more controled etch of the polymer is needed a plasma system is used instead. Plasma ashers are design for removing polymers in primarily oxygen plasmas. It you need a more directional etch with a masking material RIE2 or ASE can be used.
Comparison method 1 and method 2 for the process
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ASE
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Plasma asher 1
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Plasma asher 2
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RIE2
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By wet etch
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Generel description
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Generel description - method 1
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Generel description - method 2
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Generel description - method 3
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Generel description - method 4
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Generel description - method 5
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Parameter 1
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Parameter 2
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Substrate size
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- # small samples
- # 50 mm wafers
- # 100 mm wafers
- # 150 mm wafers
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- # small samples
- # 50 mm wafers
- # 100 mm wafers
- # 150 mm wafers
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- # small samples
- # 50 mm wafers
- # 100 mm wafers
- # 150 mm wafers
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- # small samples
- # 50 mm wafers
- # 100 mm wafers
- # 150 mm wafers
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- # small samples
- # 50 mm wafers
- # 100 mm wafers
- # 150 mm wafers
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Allowed materials
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- Allowed material 1
- Allowed material 2
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- Allowed material 1
- Allowed material 2
- Allowed material 3
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- Allowed material 1
- Allowed material 2
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- Allowed material 1
- Allowed material 2
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- Allowed material 1
- Allowed material 2
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