Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions
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!style="background:silver; color:black;"|Purpose | !style="background:silver; color:black;" align="left"|Purpose | ||
|style="background:LightGrey; color:black"|Deposition of silicon nitride ||style="background:WhiteSmoke; color:black"|Stoichiometry: | |style="background:LightGrey; color:black"|Deposition of silicon nitride ||style="background:WhiteSmoke; color:black"|Stoichiometry: | ||
*Si<sub>3</sub>N<sub>4</sub> | *Si<sub>3</sub>N<sub>4</sub> | ||
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SRN: Silicon Rich Nitride | SRN: Silicon Rich Nitride | ||
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!style="background:silver; color:black"|Performance | !style="background:silver; color:black" align="left"|Performance | ||
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"| | |style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"| | ||
*Si<sub>3</sub>N<sub>4</sub>:~50Å - ~3000Å | *Si<sub>3</sub>N<sub>4</sub>:~50Å - ~3000Å | ||
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*Few defects | *Few defects | ||
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!style="background:silver; color:black"|Process parameter range | !style="background:silver; color:black" align="left"|Process parameter range | ||
|style="background:LightGrey; color:black"|Process Temperature | |style="background:LightGrey; color:black"|Process Temperature | ||
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*NH<math>_3</math>:10-75 sccm | *NH<math>_3</math>:10-75 sccm | ||
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!style="background:silver; color:black"|Substrates | !style="background:silver; color:black" align="left"|Substrates | ||
|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
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