Specific Process Knowledge/Etch/Etching of Polymer: Difference between revisions
Appearance
| Line 121: | Line 121: | ||
<br clear="all" /> | <br clear="all" /> | ||
== | == Etchning of Polymers == | ||
Stripping of polymers are often done by wet chemistry in a solvent that dissolves the given polymer. If wet chemistry cannot be used or a more controled etch of the polymer is needed a plasma system is used instead. Plasma ashers are design for removing polymers in primarily oxygen plasmas. It you need a more directional etch with a masking material RIE2 or ASE can be used. | |||
*[[/Deposition of silicon nitride using LPCVD|Process description using method 1]] | *[[/Deposition of silicon nitride using LPCVD|Process description using method 1]] | ||
| Line 130: | Line 130: | ||
*[[/Deposition of silicon nitride using LPCVD|Process description using method 2]] | *[[/Deposition of silicon nitride using LPCVD|Process description using method 2]] | ||
<!-- Link to the process info page in LabAvdiser --> | <!-- Link to the process info page in LabAvdiser --> | ||
*[[/Deposition of silicon nitride using LPCVD|Process description using method 1]] | |||
*[[/Deposition of silicon nitride using LPCVD|Process description using method 1]] | |||
*[[/Deposition of silicon nitride using LPCVD|Process description using method 1]] | |||
<br clear="all" /> | <br clear="all" /> | ||