Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions
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!style="background:silver; color:black"|Purpose | |||
|style="background:LightGrey; color:black"|Deposition of silicon nitride ||style="background:WhiteSmoke; color:black"|Stoichiometry: | |||
*Si<sub>3</sub>N<sub>4</sub> | *Si<sub>3</sub>N<sub>4</sub> | ||
*SRN | *SRN | ||
SRN: Silicon Rich Nitride | SRN: Silicon Rich Nitride | ||
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!style="background:silver; color:black"|Performance | |||
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"| | |||
*Si<sub>3</sub>N<sub>4</sub>:~50Å - ~3000Å | *Si<sub>3</sub>N<sub>4</sub>:~50Å - ~3000Å | ||
*SRN: ~50Å - ~10000Å | *SRN: ~50Å - ~10000Å | ||
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*Few defects | *Few defects | ||
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!style="background:silver; color:black"|Process parameter range | |||
|style="background:LightGrey; color:black"|Process Temperature | |||
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*800-835 <sup>o</sup>C | *800-835 <sup>o</sup>C | ||
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*NH<math>_3</math>:10-75 sccm | *NH<math>_3</math>:10-75 sccm | ||
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!style="background:silver; color:black"|Substrates | |||
|style="background:LightGrey; color:black"|Batch size | |||
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*1-25 4" wafer per run | *1-25 4" wafer per run | ||