Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions
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|Purpose ||Deposition of silicon nitride ||Stoichiometry: | |style="background:silver; color:black"|Purpose ||style="background:LightGrey; color:black"|Deposition of silicon nitride ||style="background:WhiteSmoke; color:black"|Stoichiometry: | ||
*Si<sub>3</sub>N<sub>4</sub> | *Si<sub>3</sub>N<sub>4</sub> | ||
*SRN | *SRN | ||
SRN: Silicon Rich Nitride | SRN: Silicon Rich Nitride | ||
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|Performance||Film thickness|| | |style="background:silver; color:black"|Performance||style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"| | ||
*Si<sub>3</sub>N<sub>4</sub>:~50Å - ~3000Å | *Si<sub>3</sub>N<sub>4</sub>:~50Å - ~3000Å | ||
*SRN: ~50Å - ~10000Å | *SRN: ~50Å - ~10000Å | ||
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|||Step coverage | |style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Step coverage | ||
| | |style="background:WhiteSmoke; color:black"| | ||
*Good | *Good | ||
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|||Film quality | |style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Film quality | ||
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*Dense film | *Dense film | ||
*Few defects | *Few defects | ||
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|Process parameter range||Process Temperature | |style="background:silver; color:black"|Process parameter range||style="background:LightGrey; color:black"|Process Temperature | ||
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*800-835 <sup>o</sup>C | *800-835 <sup>o</sup>C | ||
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|||Process pressure | |style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Process pressure | ||
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*80-230 mTorr | *80-230 mTorr | ||
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|||Gas flows | |style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Gas flows | ||
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*SiH<math>_2</math>Cl<math>_2</math>:10-100 sccm | *SiH<math>_2</math>Cl<math>_2</math>:10-100 sccm | ||
*NH<math>_3</math>:10-75 sccm | *NH<math>_3</math>:10-75 sccm | ||
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|Substrates||Batch size | |style="background:silver; color:black"|Substrates||style="background:LightGrey; color:black"|Batch size | ||
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*1-25 4" wafer per run | *1-25 4" wafer per run | ||
*deposition on both sides of the substrate | *deposition on both sides of the substrate | ||
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||| Substrate material allowed | |style="background:silver; color:black"|.|| style="background:LightGrey; color:black"|Substrate material allowed | ||
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*Silicon wafers (new from the box or RCA cleaned) | *Silicon wafers (new from the box or RCA cleaned) | ||
**with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) | **with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) | ||