Specific Process Knowledge/Etch/Etching of Gold: Difference between revisions
| Line 83: | Line 83: | ||
![[Specific Process Knowledge/Etch/Wet Aluminium Etch|Al wet etch 1]] | ![[Specific Process Knowledge/Etch/Wet Aluminium Etch|Al wet etch 1]] | ||
![[Specific Process Knowledge/Etch/Wet Aluminium Etch|Al wet etch 2]] | ![[Specific Process Knowledge/Etch/Wet Aluminium Etch|Al wet etch 2]] | ||
![[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE (Ionfab300+)]] | ![[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE (Ionfab300+)]] | ||
|- | |- | ||
| Line 92: | Line 91: | ||
|Wet etch of pure Al | |Wet etch of pure Al | ||
|Wet etch of Al + 1.5% Si | |Wet etch of Al + 1.5% Si | ||
|Sputtering of Al - pure physical etch | |Sputtering of Al - pure physical etch | ||
|- | |- | ||
| Line 104: | Line 102: | ||
*~60nm/min (Al+1.5% Si) | *~60nm/min (Al+1.5% Si) | ||
| | | | ||
| | | | ||
*~30nm/min (not tested yet) | *~30nm/min (not tested yet) | ||
| Line 116: | Line 113: | ||
| | | | ||
*Isotropic | *Isotropic | ||
| | | | ||
*Anisotropic (angles sidewalls, typical around 70 dg) | *Anisotropic (angles sidewalls, typical around 70 dg) | ||
| Line 130: | Line 125: | ||
| | | | ||
*<nowiki>#</nowiki>1-25 100 mm wafers | *<nowiki>#</nowiki>1-25 100 mm wafers | ||
| | | | ||
Smaller pieces glued to carrier wafer | Smaller pieces glued to carrier wafer | ||
| Line 161: | Line 152: | ||
*Photoresist | *Photoresist | ||
*E-beam resist | *E-beam resist | ||
| | | | ||
*Silicon | *Silicon | ||