Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions
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| Stoichiometry | |Purpose ||Deposition of silicon nitride ||Stoichiometry: | ||
*Si<sub>3</sub>N<sub>4</sub> | *Si<sub>3</sub>N<sub>4</sub> | ||
*SRN | *SRN | ||
SRN: Silicon Rich Nitride | SRN: Silicon Rich Nitride | ||
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|Film thickness | |Performance||Film thickness|| | ||
| | |||
*Si<sub>3</sub>N<sub>4</sub>:~50Å - ~3000Å | *Si<sub>3</sub>N<sub>4</sub>:~50Å - ~3000Å | ||
*SRN: ~50Å - ~10000Å | *SRN: ~50Å - ~10000Å | ||
|- | |- | ||
|Step coverage | |||Step coverage | ||
| | | | ||
*Good | *Good | ||
|- | |- | ||
|Film quality | |||Film quality | ||
| | | | ||
*Dense film | *Dense film | ||
*Few defects | *Few defects | ||
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|Process Temperature | |Process parameter range||Process Temperature | ||
| | | | ||
*800-835 <sup>o</sup>C | *800-835 <sup>o</sup>C | ||
|- | |- | ||
|Batch size | |||Process pressure | ||
| | |||
*80-230 mTorr | |||
|- | |||
|||Gas flows | |||
| | |||
*SiH<math>_2</math>Cl<math>_2</math>:10-100 sccm | |||
*NH<math>_3</math>:10-75 sccm | |||
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|Substrates||Batch size | |||
| | | | ||
*1-25 4" wafer per run | *1-25 4" wafer per run | ||
*deposition on both sides of the substrate | *deposition on both sides of the substrate | ||
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| Substrate material allowed | ||| Substrate material allowed | ||
| | | | ||
*Silicon wafers | *Silicon wafers (new from the box or RCA cleaned) | ||
**with layers of silicon oxide or silicon (oxy)nitride | **with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) | ||
*Quartz wafers | *Quartz wafers (RCA cleaned) | ||
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