Specific Process Knowledge/Etch/Wet Chromium Etch: Difference between revisions
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Wet etching of chromium at Danchip is done making your own set up in a beaker in a fume hood - preferably in cleanroom 2 or 4. We have two solution for this: | Wet etching of chromium at Danchip is done making your own set up in a beaker in a fume hood - preferably in cleanroom 2 or 4. We have two solution for this: | ||
# Commercial chromium etch | |||
# HNO<sub>3</sub>:H<sub>2</sub>O:cerisulphate - 90ml:1200ml:15g - standard at Danchip | # HNO<sub>3</sub>:H<sub>2</sub>O:cerisulphate - 90ml:1200ml:15g - standard at Danchip | ||
Etch rate are depending on the level of oxidation of the metal. | Etch rate are depending on the level of oxidation of the metal. | ||
====How to mix the Chromium etch | ====How to mix the Chromium etch 2:==== | ||
#Take a beaker and add 15g of cerisulphate. | #Take a beaker and add 15g of cerisulphate. | ||
#Add a little water while stirring - make sure all lumps are gone. | #Add a little water while stirring - make sure all lumps are gone. | ||
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| '''Chemical solution''' | | '''Chemical solution''' | ||
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|HNO<sub>3</sub>:H<sub>2</sub>O:cerisulphate - 90ml:1200ml:15g | |HNO<sub>3</sub>:H<sub>2</sub>O:cerisulphate - 90ml:1200ml:15g | ||
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| '''Process temperature''' | | '''Process temperature''' | ||
|Room temperature | |Room temperature | ||
| | |Room Temperature | ||
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| '''Possible masking materials''' | | '''Possible masking materials''' | ||
| | |Photoresist (1.5 µm AZ5214E) | ||
Photoresist (1.5 µm AZ5214E) | |Photoresist (1.5 µm AZ5214E) | ||
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|- | |- | ||
|'''Etch rate''' | |'''Etch rate''' | ||
| | |~40-100 nm/min | ||
~40-100 nm/min | |. | ||
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|'''Batch size''' | |'''Batch size''' | ||
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1- | |1-7 wafers at a time | ||
| | |1-7 wafers at a time | ||
|- | |- | ||
|'''Size of substrate''' | |'''Size of substrate''' | ||