Specific Process Knowledge/Etch/Etching of Titanium: Difference between revisions
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Etching of titanium can be done either by wet etch, dry etch or by sputtering with ions. | Etching of titanium can be done either by wet etch, dry etch or by sputtering with ions. | ||
*[[Specific Process Knowledge/Etch/Wet Titanium Etch|Etching of Ti by wet etch]] | *[[Specific Process Knowledge/Etch/Wet Titanium Etch|Etching of Ti by wet etch]] | ||
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/ | *[[Specific Process Knowledge/Etch/ICP Metal Etcher/Titanium|Etching of Ti by dry etch]] | ||
*[[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300|Sputtering of | *[[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Ti etch|Sputtering of Ti]] | ||
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Revision as of 14:55, 12 March 2013
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Etching of Titanium
Etching of titanium can be done either by wet etch, dry etch or by sputtering with ions.
Comparison of Aluminium Etch Metodes
Cr wet etch 1 | Cr wet etch 2 | ICP metal | IBE (Ionfab300+) | |
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Generel description | Wet etch of Cr that you need to mix your self | Wet etch of Cr premixed | Dry plasma etch of Cr | Sputtering of Cr - pure physical etch |
Etch rate range |
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Etch profile |
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Substrate size |
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Smaller pieces glued to carrier wafer
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Allowed materials |
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals |
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals |
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Ething of Titanium can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done either with ICP using Chlorine chemistry or with IBE by sputtering with Ar ions.
Wet etching of Titanium
We have two solutions for wet titanium etching:
- BHF
- Cold RCA1
Do it by making your own set up in a beaker in a fume hood - preferably in cleanroom 2 or 4. BHF etching can also take place in the PP-etch bath in the fume hood in cleanroom 2.
Comparing the two solutions
BHF | Cold RCA1 | |
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General description | Etch of titanium with or without photoresist mask. | Etch of titanium (as stripper or with eagle resist). |
Chemical solution | HF:NH4F | NH3OH:H2O2:H2O - 1:1:5 |
Process temperature | Room temperature | Room temperature |
Possible masking materials |
Photoresist (1.5 µm AZ5214E) |
Eagle resist |
Etch rate |
Not known (it bubbles while etching) |
Not known |
Batch size |
1-5 4" in beaker 1-25 wafers at a time in PP-etch bath |
1-5 4" wafer at a time |
Etch bath | Beaker or PP-etch bath in the fume hood in cleanroom 2. | Beaker |
Allowed materials |
No restrictions when used in beaker or PP-etch bath in the fume hood in cleanroom 2. Make a note on the beaker of which materials have been processed. |
No restrictions when used in beaker. Make a note on the beaker of which materials have been processed. |
Dry etching of titanium
See the ICP Metal Etch page.