Specific Process Knowledge/Etch/Etching of Chromium

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Etching of Chromium

Etching of chromium can be done either by wet etch, dry etch or by sputtering with ions.

• Etching of Cr by wet etch
• Etching of Cr by dry etch
• Sputtering of Cr

Comparison of Aluminium Etch Metodes

	Cr wet etch 1	Cr wet etch 2	ICP metal	IBE (Ionfab300+)
Generel description	Wet etch of pure Al	Wet etch of Al + 1.5% Si	Dry plasma etch of Al	Sputtering of Al - pure physical etch
Etch rate range	~100nm/min (pure Al)	~60nm/min (Al+1.5% Si)	~350 nm/min (depending on features size and etch load)	~30nm/min (not tested yet)
Etch profile	Isotropic	Isotropic	Anisotropic (vertical sidewalls)	Anisotropic (angles sidewalls, typical around 70 dg)
Substrate size	#1-25 100 mm wafers	#1-25 100 mm wafers	smaller pieces on a carrier wafer #1 100mm wafers (when set up to 100mm wafers) #1 150mm wafers (when set up to 150mm wafers)	Smaller pieces glued to carrier wafer #1 50mm wafer #1 100mm wafer #1 150mm wafer #1 200mm wafer
Allowed materials	Aluminium Silicon Silicon Oxide Silicon Nitride Silicon Oxynitride Photoresist E-beam resist	Aluminium Silicon Silicon Oxide Silicon Nitride Silicon Oxynitride Photoresist E-beam resist	Silicon Quartz/fused silica Photoresist/e-beam resist PolySilicon, Silicon oxide Silicon (oxy)nitride Aluminium Titanium Chromium	Silicon Silicon oxides Silicon nitrides Metals from the +list Metals from the -list Alloys from the above list Stainless steel Glass III-V materials Resists Polymers Capton tape

Ething of Chromium can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done either with ICP using Chlorine chemistry or with IBE by sputtering with Ar ions.