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Etching of aluminium can be done either by wet etch, dry etch or by sputtering with ions.

	Al wet etch 1	Al wet etch 2	Al etch by ICP metal	Al sputtering by IBE (Ionfab300+)
Generel description	Wet etch of pure Al	Wet etch of Al + 1.5% Si	Dry plasma etch of Al	Sputtering of Al - pure physical etch
Etch rate range	~100nm/min (pure Al)	~60nm/min (Al+1.5% Si)	~350 nm/min (depending on features size and etch load)	~30nm/min (not tested yet)
Etch profile	Isotropic	Isotropic	Anisotropic (vertical sidewalls)	Anisotropic (angles sidewalls, typical around 70 dg)
Substrate size	#1-25 100 mm wafers	#1-25 100 mm wafers	smaller pieces on a carrier wafer #1 100mm wafers (when set up to 100mm wafers) #1 150mm wafers (when set up to 150mm wafers)	Smaller pieces glued to carrier wafer #1 50mm wafer #1 100mm wafer #1 150mm wafer #1 200mm wafer
Allowed materials	Allowed material 1 Allowed material 2	Allowed material 1 Allowed material 2 Allowed material 3

@@ Line 65: / Line 65: @@
 !Substrate size
 |
-*<nowiki>#</nowiki> small samples
+*<nowiki>#</nowiki>1-25 100 mm wafers
-*<nowiki>#</nowiki> 50 mm wafers
-*<nowiki>#</nowiki> 100 mm wafers
-*<nowiki>#</nowiki> 150 mm wafers
 |
-*<nowiki>#</nowiki> small samples
+*<nowiki>#</nowiki>1-25 100 mm wafers
-*<nowiki>#</nowiki> 50 mm wafers
+|
-*<nowiki>#</nowiki> 100 mm wafers
+*smaller pieces on a carrier wafer
-*<nowiki>#</nowiki> 150 mm wafers
+*<nowiki>#</nowiki>1 100mm wafers (when set up to 100mm wafers)
+*<nowiki>#</nowiki>1 150mm wafers (when set up to 150mm wafers)
+|
+Smaller pieces glued to carrier wafer
+*<nowiki>#</nowiki>1 50mm wafer
+*<nowiki>#</nowiki>1 100mm wafer
+*<nowiki>#</nowiki>1 150mm wafer
+*<nowiki>#</nowiki>1 200mm wafer
 |-