Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions
No edit summary |
No edit summary |
||
| Line 82: | Line 82: | ||
*TEOS:~265nm/min | *TEOS:~265nm/min | ||
*Stoichiometric Si3N4:~0.75nm/min | *Stoichiometric Si3N4:~0.75nm/min(Morten Bo Mikkelsen, March 2013) | ||
| | | | ||
*Wet thermal oxide:~25nm/min | *Wet thermal oxide:~25nm/min | ||