Specific Process Knowledge/Thermal Process: Difference between revisions

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== Choose an equipment to use ==
== Choose an equipment to use ==


*[[/A1 Bor Drive-in furnace|A1 Bor Drive-in furnace]] - ''For oxidation and annealing of Si wafers and for drive-in after boron pre-dep''
*[[/A1 Bor Drive-in furnace|Boron Drive-in furnace (A1)]] - ''For oxidation and annealing of Si wafers and for drive-in after boron pre-dep''
*[[/A2 Bor Pre-dep furnace|A2 Bor Pre-dep furnace]] - ''For pre-deposition (doping) of boron on Si wafers''
*[[/A2 Bor Pre-dep furnace|Boron Predep furnace (A2)]] - ''For pre-deposition (doping) of boron on Si wafers''
*[[/A3 Phosphor Drive-in furnace|A3 Phosphor Drive-in furnace]] - ''For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep''
*[[/A3 Phosphor Drive-in furnace|Phosphorus Drive-in furnace (A3)]] - ''For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep''
*[[/A4 Phosphor Pre-dep furnace|A4 Phosphor Pre-dep furnace]] - ''For pre-deposition (doping) of phosphorus on Si wafers''  
*[[/A4 Phosphor Pre-dep furnace|Phosphorus Predep furnace (A4)]] - ''For pre-deposition (doping) of phosphorus on Si wafers''  
*[[/C1 Furnace Anneal-oxide|C1 Furnace Anneal-oxide]] - ''For oxidation and annealing of 100 mm and 150 mm wafers''
*[[/C1 Furnace Anneal-oxide|Anneal-oxide furnace(C1)]] - ''For oxidation and annealing of 100 mm and 150 mm wafers''
*[[/C2 Gate Oxide furnace|C2 Gate Oxide furnace]] - ''For gate oxide growing on new wafers''
*[[/C2 Gate Oxide furnace|Gate Oxide furnace (C2)]] - ''For gate oxide growing on new wafers''
*[[/C3 Anneal-bond furnace|C3 Anneal-bond furnace]] - ''For oxidation and annealing of bonded wafers''
*[[/C3 Anneal-bond furnace|Anneal-bond furnace (C3)]] - ''For oxidation and annealing of bonded wafers''
*[[/C4 Aluminium Anneal furnace|C4 Aluminium Anneal furnace]] - ''For oxidation and annealing of wafers containing aluminium''
*[[/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] - ''For oxidation and annealing of wafers containing aluminium''
*[[/Furnace Noble|Furnace Noble]] - ''For annealing and oxidation of non-clean wafers''
*[[/Furnace Noble|Noble furnace]] - ''For annealing and oxidation of non-clean wafers''
*[[/Furnace APOX|Furnace APOX]] - ''For growing of very thick oxide layers''
*[[/Furnace APOX|APOX furnace]] - ''For growing of very thick oxide layers''
*[[/Jipelec RTP|Jipelec RTP]] - ''For rapid thermal annealing of III-V materials and Si based materials''
*[[/Jipelec RTP|Jipelec RTP]] - ''For rapid thermal annealing of III-V materials and Si based materials''
*[[/BCB Curing Oven|BCB Curing Oven]] - ''For resist curing and metal alloying''
*[[/BCB Curing Oven|BCB Curing oven]] - ''For resist curing and metal alloying''
*[[/Resist Pyrolysis Furnace|Resist Pyrolysis Furnace]] - ''For pyrolysis of different resist layers''
*[[/Resist Pyrolysis Furnace|Resist Pyrolysis furnace]] - ''For pyrolysis of different resist layers''

Revision as of 13:41, 14 February 2013

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