Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions

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 ==A few words about the furnace==
-The furnace is a Tempress horisontal furnace.
+The furnace is a Tempress horisontal furnace. The process is a batch process meaning you can run a batch of 25 wafers at a time. The deposition takes place at temperatures of 800-850 degrees Celsius. The LPCVD nitride has a good step coverage and the film thickness is very uniform over the wafer. We have two standard LPCVD nitride processes: One for depositing stoichiometric nitride (Si<sub>3</sub>N<sub>4</sub>) and one for deposition low stress nitride (SNR).
+{| border="1" cellspacing="0" cellpadding="3" align="center"
+!
+! LPCVD
+|-
+| Stoichiometry
+|
+*Si<sub>3</sub>N<sub>4</sub>
+*SRN
+SRN: Silicon Rich Nitride
+|-
+|Film thickness
+|
+*Si<sub>3</sub>N<sub>4</sub>:~50Å - ~3000Å
+*SRN: ~50Å - ~10000Å
+|-
+|Process Temperature
+|
+*800-835 <sup>o</sup>C
+|-
+|Step coverage
+|
+*Good
+|-
+|Film quality
+|
+*Dense film
+*Few defects
+|-
+|Batch size
+|
+*1-25 4" wafer per run
+*deposition on both sides of the substrate
+|-
+| Substrate material allowed
+|
+*Silicon wafers
+**with layers of silicon oxide or silicon (oxy)nitride
+*Quartz wafers
+|-
+|}
 ==Process Knowledge==
 [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using LPCVD|Deposition of Silicon Nitride using LPCVD]]