Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions
| Line 103: | Line 103: | ||
BHF-bath in cleanroom 4: | BHF-bath in cleanroom 4: | ||
*1-25 wafers of 4" or 6" at a time | *1-25 wafers of 4" or 6" at a time | ||
BHF-bath in RCA bench: | |||
*1-25 wafers of 4" or 6" at a time | *1-25 wafers of 4" or 6" at a time | ||
| | | | ||
| Line 110: | Line 110: | ||
PP-bath: | PP-bath: | ||
*1-25 wafers of 4" at a time | *1-25 wafers of 4" at a time | ||
HF-bath in RCA bench: | |||
*1-25 wafers of 4" or 6" at a time | *1-25 wafers of 4" or 6" at a time | ||
| | | | ||