Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions
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! 40 % HF | ! 40 % HF | ||
! SIO | ! SIO | ||
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|'''General description''' | |'''General description''' | ||
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Etching of silicon oxide - especially for etching small holes | Etching of silicon oxide - especially for etching small holes | ||
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|'''Chemical solution''' | |'''Chemical solution''' | ||
|BHF | |BHF | ||
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|40% HF | |40% HF | ||
|BHF with wetting agent | |BHF with wetting agent | ||
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|'''Process temperature''' | |'''Process temperature''' | ||
|Room temperature | |Room temperature | ||
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|Room temperature | |Room temperature | ||
|Room temperature | |Room temperature | ||
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|'''Possible masking materials''' | |'''Possible masking materials''' | ||
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*PolySi | *PolySi | ||
*Blue film | *Blue film | ||
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|'''Etch rate''' | |'''Etch rate''' | ||
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A little higher etch rates than BHF | A little higher etch rates than BHF | ||
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|'''[[#Life_time_of_the_photoresist_and_blue_film_in_BHF|Life time of the photoresist]]''' | |'''[[#Life_time_of_the_photoresist_and_blue_film_in_BHF|Life time of the photoresist]]''' | ||
|~½ hour | |~½ hour | ||
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|~½ hour | |~½ hour | ||
|~½ hour | |~½ hour | ||
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|'''Batch size''' | |'''Batch size''' | ||
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4" wafers | 4" wafers | ||
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|'''Allowed materials''' | |'''Allowed materials''' | ||
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*Silicon oxides | *Silicon oxides | ||
*Photoresist | *Photoresist | ||
|} | |} | ||
[[Image:BHF_wetting.jpg|300x300px|thumb|SIO etch (BHF with wetting agent): positioned in cleanroom 4]] | [[Image:BHF_wetting.jpg|300x300px|thumb|SIO etch (BHF with wetting agent): positioned in cleanroom 4]] | ||