Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch: Difference between revisions
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===Design of Experiment results=== | ===Design of Experiment results=== | ||
The etch rate and corner angle are dependent on several parameters each. Below two graphs showing these dependencies are shown. Note that the values are fitted and may not represent the actual value after etch, however feel free to use the graphs to estimate the values for your test run. | The etch rate and corner angle are dependent on several parameters each. Below are two graphs showing these dependencies are shown. Note that the values are fitted and may not represent the actual value after etch, however feel free to use the graphs to estimate the values for your test run. | ||
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|[[image:IBE magnetic DoE etch rate.jpg |600x300px|thumb|center|The etch rate did not show any dependency on incident angle. The shown results are fitted to the DoE data and may not give an accurate measure of etch rate.]] | |[[image:IBE magnetic DoE etch rate.jpg |600x300px|thumb|center|The etch rate did not show any dependency on incident angle. The shown results are fitted to the DoE data and may not give an accurate measure of etch rate.]] | ||