Specific Process Knowledge/Lithography

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Comparing Lithography methods at Danchip

There are a broad varity of lithography methods at Danchip. The methods are compared here to make it easier for you to compare and choose the one that suits your needs.

• Process description using method 1

• Process description using method 2

Comparison methode 1 and methode 2 for the process

	Photolithography	DUV Lithography	E-beam Lithography	Imprint Lithography	Two photon polymerization Lithography
Generel description	Generel description - methode 1	Generel description - methode 2	3	4	5
Pattern size range	~1µm and up	~200nm and up	~10nm and up	~20nm and up	3D ?nm
Resist type	UV sensitive: AZ SU8	DUV sensitive fff	E-beam sensitive ZEP502A (positive) HSQ (negative) SU8	Imprint polymers: ??	?? sensitive: ??
Resist thickness range	~0.5µm to 20µm?	~50nm to 2µm?	~30nm to 0.5 µm	~20nm to 10µm?	?nm - ?µm
Typical exposure time	2s-30s pr. wafer	?-? pr. ?	Depends on dose (in units of muC/cm2), estimate exposure time on sheet 2 of e-beam logbook	? pr. wafer	? pr. µm2
Substrate size	# small samples # 50 mm wafers # 100 mm wafers # 150 mm wafers	# small samples # 50 mm wafers # 100 mm wafers # 150 mm wafers	We have cassettes that fit to 4 small samples (20mm, 12mm, 8mm, 4mm) 6 wafers of 50 mm in size 2 wafers of 100 mm in size 1 wafer of 150 mm in size Only one cassette can be loaded at time	# small samples # 50 mm wafers # 100 mm wafers # 150 mm wafers	# small samples # 50 mm wafers # 100 mm wafers # 150 mm wafers
Allowed materials	Allowed material 1 Allowed material 2	Allowed material 1 Allowed material 2 Allowed material 3	Si, SiO2, III-V materials	Allowed material 1 Allowed material 2 Allowed material 3	Allowed material 1 Allowed material 2 Allowed material 3