Specific Process Knowledge/Etch/DRIE-Pegasus/processA: Difference between revisions
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<gallery caption="Optical images of the C01549 batch that is processed 20:10 mins." widths="250" heights="200" perrow="3"> | <gallery caption="Optical images of the C01549 batch that is processed 20:10 mins." widths="250" heights="200" perrow="3"> | ||
image:C01549.01-A.jpg|Wafer C01549.01: 5 % exposed area | image:C01549.01-A.jpg|Wafer C01549.01: 5 % exposed area. Some 190 nm of 600 nm oxide remains. | ||
image:C01549.02-A.jpg|Wafer C01549.02: 10 % exposed area | image:C01549.02-A.jpg|Wafer C01549.02: 10 % exposed area. Some 122 nm oxide remains. | ||
image:C01549.03.jpg|Wafer C01549.03: 20 % exposed area | image:C01549.03.jpg|Wafer C01549.03: 20 % exposed area. In the centre some 90 nm oxide remains. | ||
image:C01549.04-A.jpg|Wafer C01549.04: 35 % exposed area | image:C01549.04-A.jpg|Wafer C01549.04: 35 % exposed area. In the centre some 90 nm oxide remains. | ||
image:C01549.04-B.jpg|Wafer C01549.05: 35 % exposed area (close-up) | image:C01549.04-B.jpg|Wafer C01549.05: 35 % exposed area (close-up). The oxide has disappeared leaving the Si exposed. | ||
</gallery> | </gallery> | ||
The etching of silicon releases energy. This means that the faster the etch is, the more heat needs to be dissipated. Similarly, the larger a percentage of the wafer is etched, the more heat must be dissipated. Process A is the fastest etch and as seen above, the exposed area also plays an important role. The | |||