Specific Process Knowledge/Etch/Etching of Silicon: Difference between revisions
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! | !Etch rate range | ||
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* | *Si(100) @80<sup>o</sup>C: 1.29+0.05 µm/min | ||
* | *Si(100) @70<sup>o</sup>C: ~0.7 µm/min | ||
* | *Si(100) @60<sup>o</sup>C: ~0.4 µm/min | ||
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* | *~100-200 nm/min, highly dependent on doping level | ||
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* | *<40nm/min to >600nm/min depending on recipe parameters and mask design | ||
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* | *Up to 18-20 µm/min depending on recipe, mask design and aspect ratio. | ||
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* | *<130nm/min to >5.6 µm/min depending on recipe, mask design and aspect ratio. | ||
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