Jump to content

Specific Process Knowledge/Characterization/Sample imaging: Difference between revisions

← Older editNewer edit →
VisualWikitext
Line 57: Line 57:
!xxx
!xxx
|
|
*Si<sub>3</sub>N<sub>4</sub>
*SRN (only 4" nitride furnace)
Si<sub>3</sub>N<sub>4</sub>: Stoichiometric nitride
SRN: Silicon rich (low stress) nitride
|
|
*Si<sub>x</sub>N<sub>y</sub>H<sub>z</sub>
*Si<sub>x</sub>O<sub>y</sub>N<sub>z</sub>H<sub>v</sub>
Silicon nitride can be doped with boron, phosphorus or germanium
|
|
|
|
Line 73: Line 65:
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Film thickness
!xxx
|
|
*Si<sub>3</sub>N<sub>4</sub>: ~50 Å - ~1400 Å
*SRN: ~50 Å - ~2800 Å
Thicker nitride layers can be deposited over more runs
|
|
*~40 nm - 10 µm
|
|
|
|
Line 87: Line 75:
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Process temperature
!xxx
|
|
*780 <sup>o</sup>C - 845 <sup>o</sup>C
|
|
*300 <sup>o</sup>C
|
|
|
|
Line 99: Line 85:
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Step coverage
!xxx
|
|
*Good
|
|
*Less good
|
|
|
|
Line 111: Line 95:
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Film quality
!xxx
|
|
*Deposition on both sides og the substrate
*Dense film
*Few defects
|
|
*Deposition on one side of the substrate
*Less dense film
*Incorporation of hydrogen in the film
|
|
|
|
Line 127: Line 105:
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!KOH etch rate (80 <sup>o</sup>C)
!xxx
|
|
*Expected <1 Å/min
|
|
*Dependent on recipe: ~1-10 Å/min
|
|
|
|
Line 139: Line 115:
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!BHF etch rate
!xxx
|
|
*Very low
|
|
*Very high compared the LPCVD nitride
|
|
|
|
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Characterization/Sample_imaging"