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Specific Process Knowledge/Etch/DRIE-Pegasus/processA: Difference between revisions

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Bureaucrats, danchip, Administrators
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Bureaucrats, danchip, Administrators
1,918 edits
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image:C01548.05-A.jpg|Wafer C01548.05: 50 % exposed area
image:C01548.05-A.jpg|Wafer C01548.05: 50 % exposed area
Without pre-etch measurements of the thicknesses of the photoresist it is not possible to determine the resist etch rate. However, it looks very uniform.
Without pre-etch measurements of the thicknesses of the photoresist it is not possible to determine the resist etch rate. However, it looks very uniform.
</gallery>
<gallery caption="Optical images of the C01549 batch that is processed 20:10 mins." widths="250" heights="200" perrow="3">
image:C01549.01-A.jpg|Wafer C01549.01: 5 % exposed area
image:C01549.02-A.jpg|Wafer C01549.02: 10 % exposed area
image:C01549.03.jpg|Wafer C01549.03: 20 % exposed area
image:C01548.04-A.jpg|Wafer C01549.04: 35 % exposed area
image:C01548.04-B.jpg|Wafer C01549.05: 35 % exposed area (close-up)
</gallery>
</gallery>
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