Specific Process Knowledge/Characterization/Sample imaging: Difference between revisions

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(Sensofar)
(Sensofar)
|Scanning electron microscope  
|Scanning electron microscope  
(Zeiss, LEO, FEI, JEOL)
([[Specific_Process_Knowledge/Characterization/SEM:_Scanning_Electron_Microscopy/Zeiss|Zeiss]], [[Specific_Process_Knowledge/Characterization/SEM:_Scanning_Electron_Microscopy/LEO|LEO]], [[Specific_Process_Knowledge/Characterization/SEM:_Scanning_Electron_Microscopy/FEI|FEI]], [[Specific_Process_Knowledge/Characterization/SEM:_Scanning_Electron_Microscopy/Jeol|JEOL]])
|Atomic force microscope  
|Atomic force microscope  
(NanoMan)
(NanoMan)

Revision as of 11:57, 4 February 2013

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Sample imaging

A Danchip a number of instruments are available for sample imaging, including a several optical microscopes, an optical profiler, three SEMs (scanning electron micrscopes), an AFM (atomic force microscope) and two stylus profilers (Dektak). These instruments cover wide range of applications.


Comparison of optical microscope, optical profiler, SEM, AFM and stylus profiler for sample imaging

Optical microscopes Optical profiler SEM AFM Stylus profiler (Detkak)
Generel description Optical microscopes

(several)

Optical profiler

(Sensofar)

Scanning electron microscope

(Zeiss, LEO, FEI, JEOL)

Atomic force microscope

(NanoMan)

Stylus profiler

(Dektak 8, Dektak XTA)

xxx
  • Si3N4
  • SRN (only 4" nitride furnace)

Si3N4: Stoichiometric nitride

SRN: Silicon rich (low stress) nitride

  • SixNyHz
  • SixOyNzHv

Silicon nitride can be doped with boron, phosphorus or germanium

Film thickness
  • Si3N4: ~50 Å - ~1400 Å
  • SRN: ~50 Å - ~2800 Å

Thicker nitride layers can be deposited over more runs

  • ~40 nm - 10 µm
Process temperature
  • 780 oC - 845 oC
  • 300 oC
Step coverage
  • Good
  • Less good
Film quality
  • Deposition on both sides og the substrate
  • Dense film
  • Few defects
  • Deposition on one side of the substrate
  • Less dense film
  • Incorporation of hydrogen in the film
KOH etch rate (80 oC)
  • Expected <1 Å/min
  • Dependent on recipe: ~1-10 Å/min
BHF etch rate
  • Very low
  • Very high compared the LPCVD nitride
Batch size
  • Several small samples
  • One 50 mm wafer
  • One 100 mm wafer
  • One 150 mm wafer

Stage size depends on what microscope you use

  • Several small samples
  • One 50 mm wafer
  • One 100 mm wafer
  • One 150 mm wafer
  • Several small samples
  • One 50 mm wafer
  • One 100 mm wafer
(not possible to inspect entire wafer in JEOL SEM)
  • One 150 mm wafer
only Zeiss, LEO and FEI SEM, not possible to inspect entire wafer)
  • One small sample
  • One 50 mm wafer
  • One 100 mm wafer
  • One 150 mm wafer
  • One small sample
  • One 50 mm wafer
  • One 100 mm wafer
  • One 150 mm wafer
Allowed materials
  • Silicon,silion oxide, silicon nitride
  • Quartz, polymers and photoresist
  • Metals (except type 4)
  • III-V materials
  • Graphene and carbon nanotubes
  • Silicon,silion oxide, silicon nitride
  • Quartz, glass
  • Polymers and photoresist
  • Metals (except type 4)
  • III-V materials
  • Graphene and carbon nanotubes
  • Silicon,silion oxide, silicon nitride
  • Quartz, glass
  • polymers and photoresist (outbaked)
  • Metals (except type 4)
  • III-V materials
  • Graphene and carbon nanotubes
(Only FEI, use special sample holder)
  • Silicon,silion oxide, silicon nitride
  • Quartz, glass
  • Polymers and photoresist
  • Metals (except type 4)
  • III-V materials
  • Graphene and carbon nanotubes
  • Silicon,silion oxide, silicon nitride
  • Quartz, glass
  • Polymers and photoresist
  • Metals (except type 4)
  • III-V materials
  • Graphene and carbon nanotubes





The list of instruments for sample imaging available at Danchip includes 6 optical microscopes , three scanning electron microscopes (SEM's) and an atomic force microscope (AFM). These instruments cover a wide range of applications.

The optical microscopes

There is a lot of optical microscopes scattered around in the cleanroom because they are in great need. They are useful if, for instance, you need to

  • inspect the quality of UV exposed photoresist when doing photolithography,
  • check for particles on wafers that have been processed in the furnaces or the PECVD's,
  • check the quality of KOH etched structures or
  • generally verify any in batch process.

Using the different options such as bright/dark field, polarizer or transmitted/reflected light one can find a better signal for a specific need. Some of them have a camera that allows you to capture and store images.

One of the advantages of the optical microscopes is that they provide fast and easy accessible information about any sample without any kind of sample preparation. They do, however, also have some limitations. Since the depth of focus is quite limited, especially at high magnifications, one will experience problems when trying to image strucutures that have been etched more than some 10 µm: One cannot focus on both the top and the bottom at the same time. Another disadvantage is the physical limit to the resolution that makes it impossible to image structures below 1 µm.

The optical profiler (Sensofar)

The optical profiler provides standard microscope imaging, confocal imaging, confocal profiling, PSI (Phase Shift Interferometry), VSI (Vertical Scanning Interferometry) and high resolution thin film thickness measurement on a single instrument.

The main purpose is 3D topographic imaging of surfaces, Step height measurements in smaller trenches/holes than can be obtained with standard stylus method, roughness measurements with larger FOV than the AFM, but less horisontal resolution.

The scanning electron microscopes

Both shortcomings of the optical microscopes mentioned above are addressed by the use of a beam of electrons (as you do in a SEM) instead of light. The depth of focus and the resolution of a scanning electron microscope are at least one order of magnitude better. The list of advantages of a SEM compared to an optical microscope includes:

  • Much better depth of focus: Depending on the image setup it may be on the order of milimeters.
  • Much better resolution: Down to a few nanometers.
  • Much higher magnifications possible: Up to 500.000 times on some samples.
  • Quantification: As a metrology instrument the SEM is absolutely necessary.
  • The stage: It allows you to image your sample from almost any angle.
  • Tunability: One can tune the image in a number of ways in order to enhance topography or material contrast.
  • Elemental analysis: The EDX detector allows you to make detailed investigation of the sample composition.

The SEM is, however, much more complicated in terms of

  • Operation: You need training and it takes some experience and skill to obtain good images.
  • Hardware: In order to work the SEM needs a chamber under vacuum and sophisticated electronics.
  • Sample preparation and mounting: You may have to prep your sample in several ways, either coating, cleaving or mounting on specific sample holders.

The atomic force microscope

The atomic force microscope has limited use as a sample imaging instrument. In some cases the resolution of the SEM is not enough:

  • Nanometer sized particles on a surface
  • If you need to know the exact height (z) of some surface structures. The SEM only measures lateral (x,y) distances precisely.
  • Surface roughness