Jump to content

Specific Process Knowledge/Etch/Etching of Silicon: Difference between revisions

BGE (talk | contribs)
BGE (talk | contribs)
Line 181: Line 181:
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!Generel description
|Generel description - methode 1
|
|Generel description - methode 2
*Anisotropic etch in the (100)-plan
|3
*High selectivity to the other plans
|4
*Anisotropic etch: vertical sidewalls independent of the crystal plans
|5
|
*Isotropic etch in Silicon and Polysilicon
|
*Can etch isotropic and anisotropic depending on the process parameters
|
|
*As RIE but better for high aspect ratio etching and deep etches (higher etch rate)
*Good selectivity to photoresist
 
|-
|-