Specific Process Knowledge/Etch/Etching of Silicon: Difference between revisions

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== Comparing silicon etch methodes at Danchip ==
== Comparing silicon etch methodes at Danchip ==


There are a broad varity of lithography methodes at Danchip. The methodes are compared here to make it easier for you to compare and choose the one that suits your needs.  
There are a broad varity of silicon etch methodes at Danchip. The methodes are compared here to make it easier for you to compare and choose the one that suits your needs.  


*[[/Deposition of silicon nitride using LPCVD|Process description using methode 1]]
*[[/Deposition of silicon nitride using LPCVD|Process description using methode 1]]

Revision as of 11:24, 4 February 2013

Etch of silicon can be done by either wet etch or dry etch. The standard setups for this here at DANCHIP are:

Wet etches:

Dry etches:

Comparison of KOH etch, wet PolySilicon etch, RIE etch, ASE etch and DRIE-Pegasus for etching of Silicon

KOH PolySilicon etch RIE ASE DRIE-Pegasus
General description
  • Anisotropic etch in the (100)-plan
  • High selectivity to the other plans
  • Isotropic etch in Silicon and Polysilicon
  • Can etch isotropic and anisotropic depending on the process parameters
  • Anisotropic etch: vertical sidewalls independent of the crystal plans
  • As RIE but better for high aspect ratio etching and deep etches (higher etch rate)
  • Good selectivity to photoresist
  • State-of-the-art dry silicon etcher with atmospheric cassette loader
  • Extremely high etch rate and advanced processing options
Possible masking materials
  • Silicon Nitride
  • Silicon Oxide
  • Photoresist
  • Photoresist
  • E-beam resist
  • Silicon Oxide
  • Silicon Nitride
  • Aluminium
  • Chromium (ONLY RIE2!)
  • Other metals if they cover less than 5% of the wafer area (ONLY RIE2!)
  • Photoresist
  • Silicon Oxide
  • Silicon Nitride
  • Aluminium
  • Photoresist and zep resist
  • Silicon Oxide
  • Silicon Nitride
  • Aluminium oxide
Etch rate
  • Si(100) @80oC: 1.29+0.05 µm/min
  • Si(100) @70oC: ~0.7 µm/min
  • Si(100) @60oC: ~0.4 µm/min
  • ~100-200 nm/min, highly dependent on doping level
  • <40nm/min to >600nm/min depending on recipe parameters and mask design
  • <130nm/min to >5.6 µm/min depending on recipe, mask design and aspect ratio.
  • Up to 18-20 µm/min depending on recipe, mask design and aspect ratio.
Size of substrate
  • 4" in our standard bath
  • 4", 2" in "Fumehood KOH"
  • 4" in our standard bath
  • 4" (or smaller with carrier)
  • 6" (when it is set up for 6") and 4" (or smaller if you have a carrier)
  • 6" (when it is set up for 6") and 4" (or smaller if you have a carrier)
Batch size
  • 25 wafers at a time
  • 1-5 wafers in "Fumehood KOH"
  • 25 wafers at a time
  • One wafer at a time
  • One wafer at a time
  • One wafer at a time but you can load a whole batch of 25 wafers and set up an individual for each one
Allowed materials
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Other materials (only in "Fumehood KOH")
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Photoresist
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Photoresist
  • E-beam resist
  • Aluminium
  • Chromium (ONLY RIE2!)
  • Other metals if they cover less than 5% of the wafer area (ONLY RIE2!)
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Photoresist
  • E-beam resist
  • Aluminium
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Photoresist
  • zep resist
  • Aluminium oxide

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Comparing silicon etch methodes at Danchip

There are a broad varity of silicon etch methodes at Danchip. The methodes are compared here to make it easier for you to compare and choose the one that suits your needs.

Comparison methode 1 and methode 2 for the process

Photolithography DUV Lithography E-beam Lithography Imprint Lithography Two photon polymerization Lithography
Generel description Generel description - methode 1 Generel description - methode 2 3 4 5
Pattern size range
  • ~1µm and up
  • ~200nm and up
  • ~10nm and up
  • ~20nm and up
  • 3D ?nm
Resist type
  • UV sensitive:
    • AZ
    • SU8
  • DUV sensitive
    • fff
  • E-beam sensitive
    • ZEP502A (positive)
    • HSQ (negative)
    • SU8
  • Imprint polymers:
    • ??
  • ?? sensitive:
    • ??
Resist thickness range
  • ~0.5µm to 20µm?
  • ~50nm to 2µm?
  • ~30nm to 0.5 µm
  • ~20nm to 10µm?
  • ?nm - ?µm
Typical exposure time

2s-30s pr. wafer

?-? pr. ?

?-? pr. µm2

? pr. wafer

? pr. µm2

Substrate size
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers

We have cassettes that fit to

  • # 4 small samples (20mm, 12mm, 8mm, 4mm)
  • # 6 wafers of 50 mm in size
  • # 2 wafers of 100 mm in size
  • # 1 wafer of 150 mm in size
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
Allowed materials
  • Allowed material 1
  • Allowed material 2
  • Allowed material 1
  • Allowed material 2
  • Allowed material 3
  • Si, SiO2, III-V materials
  • Allowed material 1
  • Allowed material 2
  • Allowed material 3
  • Allowed material 1
  • Allowed material 2
  • Allowed material 3