Specific Process Knowledge/Characterization/Sample imaging: Difference between revisions
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![[Specific Process Knowledge/Thin film deposition/PECVD|SEM]] | ![[Specific Process Knowledge/Thin film deposition/PECVD|SEM]] | ||
![[Specific Process Knowledge/Thin film deposition/PECVD|AFM]] | ![[Specific Process Knowledge/Thin film deposition/PECVD|AFM]] | ||
![[Specific Process Knowledge/Thin film deposition/PECVD|Stylus profiler (Detkak)]] | |||
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|Atomic force microscope | |Atomic force microscope | ||
(NanoMan) | (NanoMan) | ||
|Stylus profiler | |||
(Dektak 8, Dektak XTA) | |||
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*Si<sub>x</sub>O<sub>y</sub>N<sub>z</sub>H<sub>v</sub> | *Si<sub>x</sub>O<sub>y</sub>N<sub>z</sub>H<sub>v</sub> | ||
Silicon nitride can be doped with boron, phosphorus or germanium | Silicon nitride can be doped with boron, phosphorus or germanium | ||
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*~40 nm - 10 µm | *~40 nm - 10 µm | ||
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*300 <sup>o</sup>C | *300 <sup>o</sup>C | ||
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*Less good | *Less good | ||
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*Less dense film | *Less dense film | ||
*Incorporation of hydrogen in the film | *Incorporation of hydrogen in the film | ||
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*Dependent on recipe: ~1-10 Å/min | *Dependent on recipe: ~1-10 Å/min | ||
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*Very high compared the LPCVD nitride | *Very high compared the LPCVD nitride | ||
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*1 150 mm wafer | *1 150 mm wafer | ||
Depending on what PECVD you use | Depending on what PECVD you use | ||
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*Silicon | *Silicon | ||
*Silicon | *Silicon | ||
*Silicon oxide (with boron, phosphorous and germanium) | *Silicon oxide (with boron, phosphorous and germanium) | ||
*Silicon nitrides (with boron, phosphorous and germanium) | *Silicon nitrides (with boron, phosphorous and germanium) | ||
*Pure quartz (fused silica) | *Pure quartz (fused silica) | ||
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