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=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
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== Sample imaging ==
Deposition of silicon nitride can be done with either LPCVD (Low Pressure Chemical Vapor Deposition) or PECVD (Plasma Enhanced Chemical Vapor Deposition). Stiochiometric nitride or silicon rich (low stress) LPCVD nitride is deposited on a batch of wafers in a LPCVD nitride furnace, and PECVD nitride (or oxynitride) is deposited on a few samples at a time in a PECVD system. LPCVD nitride has a good step coverage and a very good uniformity. Using PECVD it is possible to deposit a thicker layer of nitride on different types of samples, but the nitride does not cover sidewalls very well.
*[[/Deposition of silicon nitride using LPCVD|Sample imaging using optical microscopes]]
*[[/Deposition of silicon nitride using LPCVD|Sample imaging using optical profiler]]
*[[/Deposition of silicon nitride using LPCVD|Sample imaging using SEM]]
*[[/Deposition of silicon nitride using PECVD|Sample imaging using AFM]]
==Comparison of optical microscopes, optical profiler, SEM and AFM for sample imaging==
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
|-
|-
|-style="background:silver; color:black"
!
![[Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride|Optical microscopes]]
![[Specific Process Knowledge/Thin film deposition/PECVD|Optical profiler]]
![[Specific Process Knowledge/Thin film deposition/PECVD|SEM]]
![[Specific Process Knowledge/Thin film deposition/PECVD|AFM]]
|-
|-
|-style="background:WhiteSmoke; color:black"
!Generel description
|Optical microscopes
(several)
|Optical profiler
(Sensofar)
|Scanning electron microscope
(Zeiss, LEO, FEI, JEOL)
|Atomic force microscope
(NanoMan)
|-
|-
|-style="background:LightGrey; color:black"
!Stoichiometry
|
*Si<sub>3</sub>N<sub>4</sub>
*SRN (only 4" nitride furnace)
Si<sub>3</sub>N<sub>4</sub>: Stoichiometric nitride
SRN: Silicon rich (low stress) nitride
|
*Si<sub>x</sub>N<sub>y</sub>H<sub>z</sub>
*Si<sub>x</sub>O<sub>y</sub>N<sub>z</sub>H<sub>v</sub>
Silicon nitride can be doped with boron, phosphorus or germanium
|
|
|-
|-
|-style="background:WhiteSmoke; color:black"
!Film thickness
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*Si<sub>3</sub>N<sub>4</sub>: ~50 Å - ~1400 Å
*SRN: ~50 Å - ~2800 Å
Thicker nitride layers can be deposited over more runs
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*~40 nm - 10 µm
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|-
|-
|-style="background:LightGrey; color:black"
!Process temperature
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*780 <sup>o</sup>C - 845 <sup>o</sup>C
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*300 <sup>o</sup>C
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|-
|-
|-style="background:WhiteSmoke; color:black"
!Step coverage
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*Good
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*Less good
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|
|-
|-
|-style="background:LightGrey; color:black"
!Film quality
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*Deposition on both sides og the substrate
*Dense film
*Few defects
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*Deposition on one side of the substrate
*Less dense film
*Incorporation of hydrogen in the film
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|-
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|-style="background:WhiteSmoke; color:black"
!KOH etch rate (80 <sup>o</sup>C)
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*Expected <1 Å/min
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*Dependent on recipe: ~1-10 Å/min
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|-style="background:LightGrey; color:black"
!BHF etch rate
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*Very low
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*Very high compared the LPCVD nitride
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|-
|-
|-style="background:WhiteSmoke; color:black"
!Batch size
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*1-25 100 mm wafers
*1-25 150 mm wafers (only 6" furnace)
Depending on what furnace you use
|
*Several smaller samples
*1-several 50 mm wafers
*1-3 100 mm wafers
*1 150 mm wafer
Depending on what PECVD you use
|
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|-
|-
|-style="background:LightGrey; color:black"
!'''Allowed materials'''
|
*Silicon
*Silicon oxide
*Silicon nitride
*Pure quartz (fused silica)
Processed wafers have to be RCA cleaned
|
*Silicon
*Silicon oxide (with boron, phosphorous and germanium)
*Silicon nitrides (with boron, phosphorous and germanium)
*Pure quartz (fused silica)
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|
|-
|}
<br clear="all" />
The list of instruments for sample imaging available at Danchip includes 6 [[Specific Process Knowledge/Characterization/Optical microscope|optical microscopes]] , three [[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|scanning electron microscopes]] (SEM's) and an [[Specific Process Knowledge/Characterization/AFM: Atomic Force Microscopy|atomic force microscope]] (AFM). These instruments cover a wide range of applications.
The list of instruments for sample imaging available at Danchip includes 6 [[Specific Process Knowledge/Characterization/Optical microscope|optical microscopes]] , three [[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|scanning electron microscopes]] (SEM's) and an [[Specific Process Knowledge/Characterization/AFM: Atomic Force Microscopy|atomic force microscope]] (AFM). These instruments cover a wide range of applications.


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