Specific Process Knowledge/Thermal Process: Difference between revisions
New page: == Choose a process type == *Oxidation - grow an oxide *Annealing *Dope with Phosphorus *Dope with Boron == Choose an equipment to use == *A1 Furnace Boron drive-in - ''For oxidation of... |
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*Furnace Noble - ''For non-clean annealing'' | *Furnace Noble - ''For non-clean annealing'' | ||
*Furnace Dry oxide - ''For oxidation of 2" wafers'' | *Furnace Dry oxide - ''For oxidation of 2" wafers'' | ||
*Furnace APOX - ''Furnace for growing very thick oxide'' | |||
*Jipelec RTP - ''For Rapid Thermal Anneal of III-V materials and Silicon based material'' | *Jipelec RTP - ''For Rapid Thermal Anneal of III-V materials and Silicon based material'' | ||
Revision as of 12:01, 2 October 2007
Choose a process type
- Oxidation - grow an oxide
- Annealing
- Dope with Phosphorus
- Dope with Boron
Choose an equipment to use
- A1 Furnace Boron drive-in - For oxidation of new wafers and for drive in of Boron pre-dep
- A2 Furnace Boron pre-dep - Dope with Boron: For predeposition of Boron on wafers
- A3 Furnace Phosphorus drive-in - For oxidation of new wafers and for drive in of Phosphorus pre-dep
- A4 Furnace Phosphorus pre-dep - Dope with Phosphorus: For predeposition of Phosphorus on wafers
- C1 Furnace Gate oxide - For growing of Gate Oxide on new wafers
- C2 Furnace Anneal oxide - For oxidation and annealing
- C3 Furnace Anneal bond - For annealing of bonded wafers and??
- C4 Furnace Aluminium anneal - For oxidation and annealing of wafers containing Aluminium
- Furnace Noble - For non-clean annealing
- Furnace Dry oxide - For oxidation of 2" wafers
- Furnace APOX - Furnace for growing very thick oxide
- Jipelec RTP - For Rapid Thermal Anneal of III-V materials and Silicon based material