Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch): Difference between revisions
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The Bosch process uses alternation between an etch cycle and a passivation cycle. In the case of the silicon etching on the ASE, an etch phase with SF<sub>6</sub> and O<sub>2</sub> alternates with a passivation phase with C<sub>4</sub>F<sub>8</sub>. | The Bosch process uses alternation between an etch cycle and a passivation cycle. In the case of the silicon etching on the ASE, an etch phase with SF<sub>6</sub> and O<sub>2</sub> alternates with a passivation phase with C<sub>4</sub>F<sub>8</sub>. | ||
Two recipes have been optimized for the ASE | Two recipes have been optimized for the ASE. The specification is on a 10 % etch load wafer with trenches. | ||
* '''Shallolr''' | * '''Shallolr''': The shallow etch process will etch a 2 <math>\mu</math>m feature down to 20 <math>\mu</math>m trench. | ||
* '''Deepetch''': The deep etch process will etch a 50 <math>\mu</math>m feature down to 300 <math>\mu</math>m trench. | |||
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